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US09524879B2 Method for fabricating semiconductor device horizontally shifted contact plug pattern 有权
制造半导体器件水平移位接触插头图案的方法

Method for fabricating semiconductor device horizontally shifted contact plug pattern
Abstract:
Semiconductor devices, and methods for fabricating a semiconductor device, include forming a contact hole penetrating an interlayer insulating layer and exposing a conductor defining a bottom surface of the contact hole, forming a sacrificial layer filling the contact hole, forming a first trench overlapping a part of the contact hole by removing at least a part of the sacrificial layer, forming a spacer filling the first trench, forming a second trench by removing a remainder of the sacrificial layer, and forming a metal electrode filling the contact hole and the second trench using electroless plating.
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