Invention Grant
- Patent Title: Method for fabricating semiconductor device horizontally shifted contact plug pattern
- Patent Title (中): 制造半导体器件水平移位接触插头图案的方法
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Application No.: US14669221Application Date: 2015-03-26
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Publication No.: US09524879B2Publication Date: 2016-12-20
- Inventor: Jin-Su Lee , Young-Wook Park , Hee-Sook Park , Dong-Bok Lee , Jong-Myeong Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0095830 20140728
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/311 ; H01L21/768 ; H01L21/288 ; H01L21/02 ; H01L29/423 ; H01L29/78

Abstract:
Semiconductor devices, and methods for fabricating a semiconductor device, include forming a contact hole penetrating an interlayer insulating layer and exposing a conductor defining a bottom surface of the contact hole, forming a sacrificial layer filling the contact hole, forming a first trench overlapping a part of the contact hole by removing at least a part of the sacrificial layer, forming a spacer filling the first trench, forming a second trench by removing a remainder of the sacrificial layer, and forming a metal electrode filling the contact hole and the second trench using electroless plating.
Public/Granted literature
- US20160027896A1 SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2016-01-28
Information query
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