Invention Grant
- Patent Title: Method for manufacturing a semiconductor device, and semiconductor device
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Application No.: US15003820Application Date: 2016-01-22
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Publication No.: US09524940B2Publication Date: 2016-12-20
- Inventor: Thomas Fischer , Carsten Ahrens , Damian Sojka , Andre Schmenn
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/00 ; H01L21/768 ; H01L23/522 ; H01L21/784 ; H01L21/288 ; H01L21/78 ; H01L23/495 ; H01L23/482

Abstract:
According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage.
Public/Granted literature
- US20160141256A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Public/Granted day:2016-05-19
Information query
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