Invention Grant
- Patent Title: Semiconductor devices and methods for fabricating the same
-
Application No.: US14700346Application Date: 2015-04-30
-
Publication No.: US09525042B2Publication Date: 2016-12-20
- Inventor: Seokjun Won , Youngmook Oh , Moonkyun Song , MinWoo Song , Namgyu Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0049765 20120510
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/088 ; H01L21/8234 ; H01L27/092 ; H01L21/28 ; H01L21/311 ; H01L21/762

Abstract:
A semiconductor device includes a substrate including a first region and a second region, a first gate dielectric layer, a first lower gate electrode, and a first upper gate electrode sequentially stacked on the first region, a second gate dielectric layer, a second lower gate electrode, and a second upper gate electrode sequentially stacked on the second region, a first spacer disposed on a sidewall of the first upper gate electrode, a second spacer disposed on a sidewall of the second upper gate electrode, a third spacer covering the first spacer on the sidewall of the first upper gate electrode, and a fourth spacer covering the second spacer on the sidewall of the second upper gate electrode. At least one of a first sidewall of the first lower gate electrode and a second sidewall of the first lower gate electrode is in contact with the third spacer.
Public/Granted literature
- US20150311310A1 SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2015-10-29
Information query
IPC分类: