Invention Grant
- Patent Title: Method for forming integrated circuits on a strained semiconductor substrate
- Patent Title (中): 在应变半导体衬底上形成集成电路的方法
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Application No.: US14533770Application Date: 2014-11-05
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Publication No.: US09525067B2Publication Date: 2016-12-20
- Inventor: Daniel-Camille Bensahel , Aomar Halimaoui
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Seed IP Law Group LLP
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/78 ; H01L29/06 ; H01L29/32 ; H01L21/18 ; H01L21/3063
Abstract:
An electronic circuit on a strained semiconductor substrate, includes: electronic components on a first surface of a semiconductor substrate; and at least portions of a layer of a porous semiconductor material on the side of a second surface of the semiconductor substrate, opposite to the first surface, to bend the semiconductor substrate.
Public/Granted literature
- US20150054141A1 METHOD FOR FORMING INTEGRATED CIRCUITS ON A STRAINED SEMICONDUCTOR SUBSTRATE Public/Granted day:2015-02-26
Information query
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