发明授权
US09529668B2 Method and system for using NAND page buffers to improve the transfer buffer utilization of a solid state drive
有权
使用NAND页面缓冲区来提高固态驱动器的传输缓冲区利用率的方法和系统
- 专利标题: Method and system for using NAND page buffers to improve the transfer buffer utilization of a solid state drive
- 专利标题(中): 使用NAND页面缓冲区来提高固态驱动器的传输缓冲区利用率的方法和系统
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申请号: US14499010申请日: 2014-09-26
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公开(公告)号: US09529668B2公开(公告)日: 2016-12-27
- 发明人: Yogesh B. Wakchaure , David J. Pelster , Eric L. Hoffman , Xin Guo , Aliasgar S. Madraswala
- 申请人: Yogesh B. Wakchaure , David J. Pelster , Eric L. Hoffman , Xin Guo , Aliasgar S. Madraswala
- 申请人地址: US CA Santa Clara
- 专利权人: INTEL CORPORATION
- 当前专利权人: INTEL CORPORATION
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Konrad Raynes Davda & Victor LLP
- 代理商 Rabindranath Dutta
- 主分类号: G06F11/10
- IPC分类号: G06F11/10 ; G11C11/56 ; G11C29/52 ; G11C16/04 ; G06F12/02 ; G06F3/06 ; G11C29/42 ; G06F12/08 ; G11C29/04
摘要:
A page data (e.g., upper page data) received from a host is stored in a transfer buffer of a controller of a solid state drive. Another page data (e.g., lower page data) is read from a non-volatile memory (e.g., a NAND memory) to store in the transfer buffer as an error corrected page data. The error corrected page data and the page data are written to the non-volatile memory. In additional embodiments, a controller loads a page data (e.g., upper page data) received from the host in one or more NAND page buffers. The controller reads another page data (e.g., lower page data) from a NAND memory to store in a transfer buffer as an error corrected page data. The error corrected page data stored in the transfer buffer is loaded to the one or more NAND page buffers.
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