Invention Grant
- Patent Title: In-situ charging neutralization
- Patent Title (中): 原位充电中和
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Application No.: US13753627Application Date: 2013-01-30
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Publication No.: US09530617B2Publication Date: 2016-12-27
- Inventor: Lin-Jung Wu , Jyh-Shiou Hsu , Chi-Ming Yang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/66
Abstract:
Some embodiments relate to a method for semiconductor processing. In this method, a semiconductor wafer is provided. A surface region of the semiconductor wafer is probed to determine whether excess charge is present on the surface region. Based on whether excess charge is present, selectively inducing a corona discharge to reduce the excess charge. Other techniques are also provided.
Public/Granted literature
- US20140210506A1 In-Situ Charging Neutralization Public/Granted day:2014-07-31
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