公开(公告)号：US20140227861A1

公开(公告)日：2014-08-14

申请号：US13762547

申请日：2013-02-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Lin-Jung Wu ,  Su-Horng Lin ,  Chi-Ming Yang

IPC: H01L21/326

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/45542 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32706 ,  H01J37/32926 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/687

Abstract: The present disclosure relates to a method and apparatus for performing a plasma enhanced ALD (PEALD) process that provides for improved step coverage. The process introduces a precursor gas into a processing chamber comprising a semiconductor workpiece. The first gas is ionized to from a plurality of ionized precursor molecules. A bias voltage is subsequently applied to the workpiece. The bias voltage attracts the ionized precursor molecules to the workpiece, so as to provide anisotropic coverage of the workpiece with the precursor gas. A reactant gas is introduced into the processing chamber. A plasma is subsequently ignited from the reactant gas, causing the reactant gas to react with the ionized precursor molecules that have been deposited onto the substrate to form a deposited layer on the workpiece.

Abstract translation: 本公开涉及一种用于执行等离子体增强ALD（PEALD）过程的方法和装置，其提供改进的步骤覆盖。 该方法将前体气体引入到包括半导体工件的处理室中。 将第一气体从多个离子化的前体分子离子化。 随后将偏置电压施加到工件。 偏置电压将离子化的前体分子吸引到工件，以便为前体气体提供工件的各向异性覆盖。 将反应气体引入处理室。 等离子体随后从反应气体中点燃，使反应气体与沉积在基底上的离子化前体分子反应，在工件上形成沉积层。

公开(公告)号：US20170306485A1

公开(公告)日：2017-10-26

申请号：US15138473

申请日：2016-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Chieh Lee ,  Chi-Ming Yang ,  Lin-Jung Wu

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/40

CPC classification number: C23C16/4482 ,  C23C16/405 ,  C23C16/4402

Abstract: A method of solid precursor delivery for a vapor deposition process is provided. In some embodiments, a precursor ampoule is provided including a solid precursor arranged in the precursor ampoule. A solvent is added to the precursor ampoule including one or more ionic liquids to dissolve chemical species of the solid precursor and to form a liquid precursor. A carrier gas is applied into the liquid precursor through an inlet of the precursor ampoule. A gas precursor is generated at an upper region of the precursor ampoule by vaporization of the liquid precursor. The chemical species of the solid precursor are delivered into a vapor deposition chamber by the carrier gas. The chemical species of the solid precursor is deposited onto a substrate within the vapor deposition chamber.

公开(公告)号：US09869018B2

公开(公告)日：2018-01-16

申请号：US15138473

申请日：2016-04-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Chieh Lee ,  Chi-Ming Yang ,  Lin-Jung Wu

IPC: C23C16/48 ,  C23C16/448 ,  C23C16/44 ,  C23C16/40

CPC classification number: C23C16/4482 ,  C23C16/405 ,  C23C16/4402

Abstract: A method of solid precursor delivery for a vapor deposition process is provided. In some embodiments, a precursor ampoule is provided including a solid precursor arranged in the precursor ampoule. A solvent is added to the precursor ampoule including one or more ionic liquids to dissolve chemical species of the solid precursor and to form a liquid precursor. A carrier gas is applied into the liquid precursor through an inlet of the precursor ampoule. A gas precursor is generated at an upper region of the precursor ampoule by vaporization of the liquid precursor. The chemical species of the solid precursor are delivered into a vapor deposition chamber by the carrier gas. The chemical species of the solid precursor is deposited onto a substrate within the vapor deposition chamber.

公开(公告)号：US10276397B2

公开(公告)日：2019-04-30

申请号：US14803445

申请日：2015-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ling Lee ,  Lin-Jung Wu ,  Victor Y. Lu

IPC: H01L21/311 ,  H01L21/288 ,  H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: The present disclosure relates to an improved method of forming interconnection layers to reduce voids and improve reliability, and an associated device. In some embodiments, a dielectric layer is formed over a semiconductor substrate having an opening arranged within the dielectric layer. A metal seed layer is formed on the surfaces of the opening using a chemical vapor deposition (CVD) process. Then a metal layer is plated onto the metal seed layer to fill the opening. Forming the metal seed layer using a CVD process provides the seed layer with a good uniformity, which allows for high aspect ratio openings in the dielectric layer to be filled without voids or pinch off.

公开(公告)号：US09530617B2

公开(公告)日：2016-12-27

申请号：US13753627

申请日：2013-01-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lin-Jung Wu ,  Jyh-Shiou Hsu ,  Chi-Ming Yang

IPC: H01J37/32 ,  H01L21/66

CPC classification number: H01J37/32073 ,  H01J37/32935 ,  H01L22/14 ,  H01L22/20

Abstract: Some embodiments relate to a method for semiconductor processing. In this method, a semiconductor wafer is provided. A surface region of the semiconductor wafer is probed to determine whether excess charge is present on the surface region. Based on whether excess charge is present, selectively inducing a corona discharge to reduce the excess charge. Other techniques are also provided.

Abstract translation: 一些实施例涉及用于半导体处理的方法。 在该方法中，设置半导体晶片。 探测半导体晶片的表面区域以确定表面区域上是否存在过量电荷。 基于是否存在过量电荷，选择性地引起电晕放电以减少过量电荷。 还提供其他技术。

公开(公告)号：US20160013043A1

公开(公告)日：2016-01-14

申请号：US14861441

申请日：2015-09-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lin-Jung Wu ,  Su-Horng Lin ,  Chi-Ming Yang

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/285

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/45542 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32706 ,  H01J37/32926 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/687

Abstract: The present disclosure relates to a method and apparatus for performing a plasma enhanced ALD (PEALD) process that provides for improved step coverage. The process introduces a precursor gas into a processing chamber comprising a semiconductor workpiece. The first gas is ionized to from a plurality of ionized precursor molecules. A bias voltage is subsequently applied to the workpiece. The bias voltage attracts the ionized precursor molecules to the workpiece, so as to provide anisotropic coverage of the workpiece with the precursor gas. A reactant gas is introduced into the processing chamber. A plasma is subsequently ignited from the reactant gas, causing the reactant gas to react with the ionized precursor molecules that have been deposited onto the substrate to form a deposited layer on the workpiece.

Abstract translation: 本公开涉及一种用于执行等离子体增强ALD（PEALD）过程的方法和装置，其提供改进的步骤覆盖。 该方法将前体气体引入到包括半导体工件的处理室中。 将第一气体从多个离子化的前体分子离子化。 随后将偏置电压施加到工件。 偏置电压将离子化的前体分子吸引到工件，以便为前体气体提供工件的各向异性覆盖。 将反应气体引入处理室。 等离子体随后从反应气体中点燃，使反应气体与沉积在基底上的离子化前体分子反应，在工件上形成沉积层。

公开(公告)号：US20140210506A1

公开(公告)日：2014-07-31

申请号：US13753627

申请日：2013-01-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Lin-Jung Wu ,  Jyh-Shiou Hsu ,  Chi-Ming Yang

IPC: G01R31/26

CPC classification number: H01J37/32073 ,  H01J37/32935 ,  H01L22/14 ,  H01L22/20

Abstract: Some embodiments relate to a method for semiconductor processing. In this method, a semiconductor wafer is provided. A surface region of the semiconductor wafer is probed to determine whether excess charge is present on the surface region. Based on whether excess charge is present, selectively inducing a corona discharge to reduce the excess charge. Other techniques are also provided.

Abstract translation: 一些实施例涉及用于半导体处理的方法。 在该方法中，设置半导体晶片。 探测半导体晶片的表面区域以确定表面区域上是否存在过量电荷。 基于是否存在过量电荷，选择性地引起电晕放电以减少过量电荷。 还提供其他技术。

公开(公告)号：US10121653B2

公开(公告)日：2018-11-06

申请号：US14861441

申请日：2015-09-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lin-Jung Wu ,  Su-Horng Lin ,  Chi-Ming Yang

IPC: H01L21/00 ,  H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  C23C16/455 ,  H01L21/285 ,  H01L21/687

Abstract: The present disclosure relates to a method and apparatus for performing a plasma enhanced ALD (PEALD) process that provides for improved step coverage. The process introduces a precursor gas into a processing chamber comprising a semiconductor workpiece. The first gas is ionized to form a plurality of ionized precursor molecules. A bias voltage is subsequently applied to the workpiece. The bias voltage attracts the ionized precursor molecules to the workpiece, so as to provide anisotropic coverage of the workpiece with the precursor gas. A reactant gas is introduced into the processing chamber. A plasma is subsequently ignited from the reactant gas, causing the reactant gas to react with the ionized precursor molecules that have been deposited onto the substrate to form a deposited layer on the workpiece.

公开(公告)号：US20170005038A1

公开(公告)日：2017-01-05

申请号：US14803445

申请日：2015-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ling Lee ,  Lin-Jung Wu ,  Victor Y. Lu

IPC: H01L23/532 ,  H01L21/311 ,  H01L21/285 ,  H01L21/288 ,  H01L21/768

CPC classification number: H01L21/31111 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2221/1063

Abstract: The present disclosure relates to an improved method of forming interconnection layers to reduce voids and improve reliability, and an associated device. In some embodiments, a dielectric layer is formed over a semiconductor substrate having an opening arranged within the dielectric layer. A metal seed layer is formed on the surfaces of the opening using a chemical vapor deposition (CVD) process. Then a metal layer is plated onto the metal seed layer to fill the opening. Forming the metal seed layer using a CVD process provides the seed layer with a good uniformity, which allows for high aspect ratio openings in the dielectric layer to be filled without voids or pinch off.

Abstract translation: 本公开涉及形成互连层以减少空隙并提高可靠性的改进方法，以及相关联的装置。 在一些实施例中，在具有布置在电介质层内的开口的半导体衬底之上形成电介质层。 使用化学气相沉积（CVD）工艺在开口的表面上形成金属种子层。 然后将金属层镀在金属种子层上以填充开口。 使用CVD工艺形成金属种子层使得种子层具有良好的均匀性，这允许电介质层中的高纵横比开口被填充而没有空隙或夹断。

公开(公告)号：US09184045B2

公开(公告)日：2015-11-10

申请号：US13762547

申请日：2013-02-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lin-Jung Wu ,  Su-Horng Lin ,  Chi-Ming Yang

IPC: H01L21/00 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/45542 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32706 ,  H01J37/32926 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/687

Abstract: The present disclosure relates to a method and apparatus for performing a plasma enhanced ALD (PEALD) process that provides for improved step coverage. The process introduces a precursor gas into a processing chamber comprising a semiconductor workpiece. The first gas is ionized to from a plurality of ionized precursor molecules. A bias voltage is subsequently applied to the workpiece. The bias voltage attracts the ionized precursor molecules to the workpiece, so as to provide anisotropic coverage of the workpiece with the precursor gas. A reactant gas is introduced into the processing chamber. A plasma is subsequently ignited from the reactant gas, causing the reactant gas to react with the ionized precursor molecules that have been deposited onto the substrate to form a deposited layer on the workpiece.

Abstract translation: 本公开涉及一种用于执行等离子体增强ALD（PEALD）过程的方法和装置，其提供改进的步骤覆盖。 该方法将前体气体引入到包括半导体工件的处理室中。 将第一气体从多个离子化的前体分子离子化。 随后将偏置电压施加到工件。 偏置电压将离子化的前体分子吸引到工件，以便为前体气体提供工件的各向异性覆盖。 将反应气体引入处理室。 等离子体随后从反应气体中点燃，使反应气体与沉积在基底上的离子化前体分子反应，在工件上形成沉积层。