Invention Grant
US09530656B2 Temperature control in RF chamber with heater and air amplifier
有权
带加热器和空气放大器的RF室中的温度控制
- Patent Title: Temperature control in RF chamber with heater and air amplifier
- Patent Title (中): 带加热器和空气放大器的RF室中的温度控制
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Application No.: US13851793Application Date: 2013-03-27
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Publication No.: US09530656B2Publication Date: 2016-12-27
- Inventor: Jon McChesney , Alex Paterson
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: H01L21/306
- IPC: H01L21/306 ; C23C16/00 ; H01L21/3065 ; H01J37/32

Abstract:
Systems, methods, and computer programs are presented for controlling the temperature of a window in a semiconductor manufacturing chamber. One apparatus includes an air amplifier, a plenum, a heater, a temperature sensor, and a controller. The air amplifier is coupled to pressurized gas and generates, when activated, a flow of air. The air amplifier is also coupled to the plenum and the heater. The plenum receives the flow of air and distributes the flow of air over a window of the plasma chamber. When the heater is activated, the flow of air is heated during processing, and when the heater is not activated, the flow of air cools the window. The temperature sensor is situated about the window of the plasma chamber, and the controller is defined to activate both the air amplifier and the heater based on a temperature measured by the temperature sensor.
Public/Granted literature
- US20130228283A1 Temperature Control in RF Chamber with Heater and Air Amplifier Public/Granted day:2013-09-05
Information query
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