Invention Grant
- Patent Title: Method of processing substrate and substrate processing apparatus
- Patent Title (中): 处理衬底和衬底处理设备的方法
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Application No.: US14529241Application Date: 2014-10-31
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Publication No.: US09530657B2Publication Date: 2016-12-27
- Inventor: Masafumi Urakawa , Rui Takahashi , Masahiro Ogasawara
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2013-234871 20131113
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/67 ; H01J37/32 ; H01L21/683
Abstract:
A method of processing a substrate using a substrate processing apparatus that has an electrostatic chuck including an insulating member inside which an electrode is included and provides a plasma process to a substrate mounted on the electrostatic chuck includes a first process of supplying a heat transfer gas having a second gas pressure to a back surface of the substrate while eliminating electric charges in the substrate using plasma of a process gas having a first gas pressure.
Public/Granted literature
- US20150132967A1 METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2015-05-14
Information query
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