Invention Grant
- Patent Title: Recess with asymmetric walls and method of fabricating the same
- Patent Title (中): 具有不对称壁的凹陷及其制造方法
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Application No.: US14558686Application Date: 2014-12-02
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Publication No.: US09536922B2Publication Date: 2017-01-03
- Inventor: Ming-Te Lai , Chih-Hong Wu , Feng-Ying Hsu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L23/48 ; H01L27/146 ; H01L21/48 ; H01L21/311 ; H01L21/02
Abstract:
A fabricating method of a recess with asymmetric walls includes the steps of providing a substrate comprising a top surface. A recess is formed in the substrate, wherein the recess comprises a first wall, a second wall and a bottom. A patterned mask is formed to cover the substrate. Part of the top surface adjacent to the second wall is exposed through the patterned mask. Finally, the substrate is removed to form a sloping wall, wherein the sloping wall, the first wall and the bottom form a recess with asymmetric walls.
Public/Granted literature
- US20160155764A1 RECESS WITH ASYMMETRIC WALLS AND METHOD OF FABRICATING THE SAME Public/Granted day:2016-06-02
Information query
IPC分类:
