公开(公告)号：US20160155764A1

公开(公告)日：2016-06-02

申请号：US14558686

申请日：2014-12-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Te Lai ,  Chih-Hong Wu ,  Feng-Ying Hsu

IPC: H01L27/146 ,  H01L21/311 ,  H01L21/02 ,  H01L21/48

CPC classification number: H01L27/14683 ,  H01L21/02233 ,  H01L21/3083 ,  H01L21/31144 ,  H01L21/481 ,  H01L27/14632 ,  H01L27/14687

Abstract: A fabricating method of a recess with asymmetric walls includes the steps of providing a substrate comprising a top surface. A recess is formed in the substrate, wherein the recess comprises a first wall, a second wall and a bottom. A patterned mask is formed to cover the substrate. Part of the top surface adjacent to the second wall is exposed through the patterned mask. Finally, the substrate is removed to form a sloping wall, wherein the sloping wall, the first wall and the bottom form a recess with asymmetric walls.

Abstract translation: 具有不对称壁的凹部的制造方法包括提供包括顶表面的基底的步骤。 在衬底中形成凹部，其中凹部包括第一壁，第二壁和底部。 形成图案化掩模以覆盖基板。 与第二壁相邻的顶表面的一部分通过图案化掩模曝光。 最后，去除衬底以形成倾斜壁，其中倾斜壁，第一壁和底部形成具有不对称壁的凹部。

公开(公告)号：US09536922B2

公开(公告)日：2017-01-03

申请号：US14558686

申请日：2014-12-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Te Lai ,  Chih-Hong Wu ,  Feng-Ying Hsu

IPC: H01L21/84 ,  H01L23/48 ,  H01L27/146 ,  H01L21/48 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L27/14683 ,  H01L21/02233 ,  H01L21/3083 ,  H01L21/31144 ,  H01L21/481 ,  H01L27/14632 ,  H01L27/14687

Abstract: A fabricating method of a recess with asymmetric walls includes the steps of providing a substrate comprising a top surface. A recess is formed in the substrate, wherein the recess comprises a first wall, a second wall and a bottom. A patterned mask is formed to cover the substrate. Part of the top surface adjacent to the second wall is exposed through the patterned mask. Finally, the substrate is removed to form a sloping wall, wherein the sloping wall, the first wall and the bottom form a recess with asymmetric walls.

Abstract translation: 具有不对称壁的凹部的制造方法包括提供包括顶表面的基底的步骤。 在衬底中形成凹部，其中凹部包括第一壁，第二壁和底部。 形成图案化掩模以覆盖基板。 与第二壁相邻的顶表面的一部分通过图案化掩模曝光。 最后，去除衬底以形成倾斜壁，其中倾斜壁，第一壁和底部形成具有不对称壁的凹部。