发明授权
- 专利标题: Semiconductor device having a plurality of electric field relaxation layers and method for manufacturing same
- 专利标题(中): 具有多个电场弛豫层的半导体装置及其制造方法
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申请号: US14363914申请日: 2012-08-02
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公开(公告)号: US09536942B2公开(公告)日: 2017-01-03
- 发明人: Tsuyoshi Kawakami , Kenji Hamada , Kohei Ebihara , Akihiko Furukawa , Yuji Murakami
- 申请人: Tsuyoshi Kawakami , Kenji Hamada , Kohei Ebihara , Akihiko Furukawa , Yuji Murakami
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2012-059899 20120315
- 国际申请: PCT/JP2012/069700 WO 20120802
- 国际公布: WO2013/136550 WO 20130919
- 主分类号: H01L21/266
- IPC分类号: H01L21/266 ; H01L29/78 ; H01L29/872 ; H01L29/06 ; H01L29/861 ; H01L29/66 ; H01L29/08 ; H01L29/16 ; H01L29/423
摘要:
A semiconductor device includes an active region formed in an upper layer portion of a semiconductor layer of a first conductivity type, and a plurality of electric field relaxation layers disposed from an edge of the active region toward the outside so as to surround the active region. The plurality of electric field relaxation layers include a plurality of first electric field relaxation layers and a plurality of second electric field relaxation layers alternately disposed adjacent to each other, the first electric field relaxation layer and the second electric field relaxation layer adjacent to each other forming a set. Impurities of a second conductivity type are implanted to the first electric field relaxation layers at a first surface density, widths of which becoming smaller as apart from the active region. Impurities of the second conductivity type are implanted to the second electric field relaxation layers at a second surface density lower than the first surface density, widths of which becoming larger as apart from the active region.
公开/授权文献
- US20140353678A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 公开/授权日:2014-12-04