Invention Grant
US09540228B2 MEMS-CMOS device that minimizes outgassing and methods of manufacture
有权
最小化除气的MEMS-CMOS器件和制造方法
- Patent Title: MEMS-CMOS device that minimizes outgassing and methods of manufacture
- Patent Title (中): 最小化除气的MEMS-CMOS器件和制造方法
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Application No.: US14748012Application Date: 2015-06-23
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Publication No.: US09540228B2Publication Date: 2017-01-10
- Inventor: Peter Smeys , Jong Il Shin , Jongwoo Shin
- Applicant: InvenSense, Inc.
- Applicant Address: US CA San Jose
- Assignee: INVENSENSE, INC.
- Current Assignee: INVENSENSE, INC.
- Current Assignee Address: US CA San Jose
- Agency: Amin, Turocy & Watson, LLP
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00
Abstract:
A MEMS device is disclosed. The MEMS device includes a first substrate. At least one structure is formed within the first substrate. The first substrate includes at least one first conductive pad thereon. The MEMS device also includes a second substrate. The second substrate includes a passivation layer. The passivation layer includes a plurality of layers. A top layer of the plurality of layers comprises an outgassing barrier layer. At least one second conductive pad and at least one electrode are coupled to the top layer. At least one first conductive pad is coupled to the at least one second conductive pad.
Public/Granted literature
- US20160221819A1 MEMS-CMOS DEVICE THAT MINIMIZES OUTGASSING AND METHODS OF MANUFACTURE Public/Granted day:2016-08-04
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