Invention Grant
- Patent Title: Amorphous silicon crystallizing method, crystallized silicon film forming method, semiconductor device manufacturing method and film forming apparatus
- Patent Title (中): 非晶硅结晶方法，结晶硅膜形成方法，半导体器件制造方法和成膜装置
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Application No.: US14566069Application Date: 2014-12-10
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Publication No.: US09540743B2Publication Date: 2017-01-10
- Inventor: Kazuya Takahashi , Yoshikazu Furusawa , Mitsuhiro Okada , Hiromasa Yonekura
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2013-255894 20131211
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/322 ; C30B5/00 ; C30B1/02 ; C30B29/54 ; C30B29/06
Abstract:
There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystallize silicones contained in at least the second amorphous silicon film.
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