公开(公告)号：US20240084481A1

公开(公告)日：2024-03-14

申请号：US18271135

申请日：2022-01-10

申请人： Trustees of Tufts College

发明人： Hyunmin YI ,  Maurice Bukenya ,  Subhash Kalidindi

IPC分类号： C30B29/58 ,  B82Y20/00 ,  B82Y30/00 ,  C30B5/00

CPC分类号： C30B29/58 ,  B82Y20/00 ,  B82Y30/00 ,  C30B5/00

摘要： Disclosed is a method for producing a micropatterned opal hydrogel film comprising an evaporation-polymerization method. The method provides a simple and inexpensive fabrication method to produce micropatterned opal hydrogel films.

公开(公告)号：US10115888B2

公开(公告)日：2018-10-30

申请号：US15444879

申请日：2017-02-28

申请人： YOUTEC CO., LTD.

发明人： Takeshi Kijima ,  Yuuji Honda

IPC分类号： C23C16/40 ,  C23C16/06 ,  H01L41/316 ,  C30B29/68 ,  C30B29/02 ,  C30B29/16 ,  H01L41/08 ,  H01L41/319 ,  C30B23/02 ,  C23C14/18 ,  C23C14/30 ,  C23C14/34 ,  C23C16/48 ,  C30B5/00 ,  C30B23/08 ,  C30B25/10 ,  C30B25/18 ,  C30B29/06 ,  C30B29/32

摘要： A method for manufacturing a crystal film including: forming a Zr film on a substrate heated to 700° C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal; forming a ZrO2 film on said Zr film on a substrate heated to 700° C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and forming a Y2O3 film on said ZrO2 film on a substrate heated to 700° C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.

公开(公告)号：US09777392B2

公开(公告)日：2017-10-03

申请号：US14331387

申请日：2014-07-15

申请人： Industry-Academic Cooperation Foundation, Yonsei University

发明人： Unyong Jeong ,  JaeMin Myoung ,  Taeil Lee ,  ChooJin Park

IPC分类号： C30B1/12 ,  C30B29/02 ,  C30B29/54 ,  C30B30/00 ,  C30B5/00 ,  C30B29/16 ,  B82Y20/00 ,  B82Y40/00

CPC分类号： C30B1/12 ,  B82Y20/00 ,  B82Y40/00 ,  C30B5/00 ,  C30B29/02 ,  C30B29/16 ,  C30B29/54 ,  C30B30/00 ,  Y10T428/24851

摘要： Disclosed is a method of fabricating a single crystal colloidal monolayer on a substrate. The method includes preparing a pair of adhesive substrates, arranging powder particles between the substrates, and uniaxially rubbing one of the substrates in any one direction to allow the particles to be close-packed between the substrates, thereby forming a single crystal monolayer.

公开(公告)号：US20170170384A1

公开(公告)日：2017-06-15

申请号：US15444879

申请日：2017-02-28

申请人： YOUTEC CO., LTD.

发明人： Takeshi KIJIMA ,  Yuuji HONDA

IPC分类号： H01L41/316 ,  H01L41/08 ,  C30B5/00 ,  C30B23/08 ,  C30B25/10 ,  C30B25/18 ,  C30B29/06 ,  C30B29/32 ,  C30B29/68 ,  C23C14/18 ,  C23C14/34 ,  C23C14/30 ,  C23C16/40 ,  C23C16/48 ,  H01L41/319

CPC分类号： H01L41/316 ,  C23C14/185 ,  C23C14/30 ,  C23C14/34 ,  C23C16/405 ,  C23C16/487 ,  C30B5/00 ,  C30B23/02 ,  C30B23/08 ,  C30B25/10 ,  C30B25/18 ,  C30B29/02 ,  C30B29/06 ,  C30B29/16 ,  C30B29/32 ,  C30B29/68 ,  H01L41/0815 ,  H01L41/319 ,  Y10T428/266

摘要： To improve the single crystallinity of a stacked film in which a ZrO2 film and a Y2O3 film are stacked or a YSZ film. A crystal film includes a Zr film and a stacked film in which a ZrO2 film and a Y2O3 film formed on the Zr film are stacked, and has a peak half-value width when the stacked film is evaluated by X-ray diffraction being 0.05° to 2.0°.

公开(公告)号：US09533889B2

公开(公告)日：2017-01-03

申请号：US13694356

申请日：2012-11-26

申请人： Aruna Zhamu ,  Mingchao Wang ,  Wei Xiong ,  Bor Z. Jang

发明人： Aruna Zhamu ,  Mingchao Wang ,  Wei Xiong ,  Bor Z. Jang

IPC分类号： B32B9/00 ,  C01B31/04 ,  C30B5/00 ,  C30B29/02 ,  C30B29/68 ,  B82Y30/00 ,  B82Y40/00

CPC分类号： C30B1/02 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/182 ,  C01B32/184 ,  C01B32/19 ,  C01B32/192 ,  C01B32/22 ,  C01B32/225 ,  C01B32/23 ,  C01P2006/10 ,  C01P2006/32 ,  C01P2006/40 ,  C01P2006/80 ,  C30B5/00 ,  C30B29/02 ,  C30B29/68 ,  Y10S977/734 ,  Y10S977/842 ,  Y10T428/30

摘要： A unitary graphene layer or graphene single crystal containing closely packed and chemically bonded parallel graphene planes having an inter-graphene plane spacing of 0.335 to 0.40 nm and an oxygen content of 0.01% to 10% by weight, which unitary graphene layer or graphene single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100° C., wherein the average mis-orientation angle between two graphene planes is less than 10 degrees, more typically less than 5 degrees. The molecules in the graphene oxide gel, upon drying and heat-treating, are chemically interconnected and integrated into a unitary graphene entity containing no discrete graphite flake or graphene platelet. This graphene monolith exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.

摘要翻译： 单层石墨烯层或石墨烯单晶，其含有紧密堆积和化学结合的平行石墨烯平面，其石墨烯平面间距为0.335至0.40nm，氧含量为0.01重量％至10重量％，该单一石墨烯层或石墨烯单晶 通过在高于100℃的温度下热处理石墨烯氧化物凝胶获得，其中两个石墨烯平面之间的平均错位取向角小于10度，更典型地小于5度。 石墨烯氧化物凝胶中的分子在干燥和热处理后被化学相互连接并整合成不含离散石墨薄片或石墨烯薄片的单一石墨烯实体。 该石墨烯整体结构具有卓越的导热性，导电性，机械强度，表面平滑度，表面硬度和耐刮擦性，可与任何相当厚度范围的薄膜材料匹配。

公开(公告)号：US20160083863A1

公开(公告)日：2016-03-24

申请号：US14853191

申请日：2015-09-14

申请人： CORNING INCORPORATED

发明人： Glen Bennett Cook ,  Ann MeeJin Ferrie ,  Shawn Michael O'Malley ,  Vitor Marino Schneider

IPC分类号： C30B5/00 ,  C09D1/00 ,  C30B29/20 ,  C09D5/00

CPC分类号： C30B13/00 ,  C03C17/25 ,  C03C2217/214 ,  C03C2218/113 ,  C03C2218/116 ,  C03C2218/32 ,  C23C18/1216 ,  C23C18/1241 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1295 ,  C30B29/20

摘要： A crystallized layer can be formed on a substrate from a precursor layer deposited on a surface of the substrate. The precursor layer can be an oxide, a nitride, a carbide, or an oxynitride. The process for forming the crystallized layer includes melting the precursor layer formed on the surface of the substrate by localized topical heating of the precursor layer and then cooling the melted precursor layer so that it crystallized to form a scratch resistant crystallized layer. The scratch resistant crystallized layer can have a hardness of 15 GPa or greater.

摘要翻译： 结晶层可以从沉积在基板的表面上的前体层形成在基板上。 前体层可以是氧化物，氮化物，碳化物或氧氮化物。 形成结晶层的方法包括通过局部局部加热前体层熔化形成在基材表面上的前体层，然后冷却熔融的前体层，使其结晶形成耐划伤的结晶层。 耐刮擦结晶层的硬度可以为15GPa以上。

公开(公告)号：US08506703B2

公开(公告)日：2013-08-13

申请号：US12359687

申请日：2009-01-26

申请人： Young-sang Cho ,  Mi-jeong Song ,  Hong-seok Lee

发明人： Young-sang Cho ,  Mi-jeong Song ,  Hong-seok Lee

IPC分类号： C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B28/02

CPC分类号： C30B29/68

摘要： A method for forming colloidal photonic crystals comprises; surrounding an outer circumference of a cylinder with a flexible substrate, spacing the cylinder a predetermined distance from a panel coated with a colloidal solution, and rotating the cylinder to form colloidal photonic crystals on the flexible panel.

摘要翻译： 形成胶体光子晶体的方法包括： 围绕具有柔性基板的圆筒的外周，将圆筒与涂有胶体溶液的面板隔开预定距离，并旋转圆筒以在柔性面板上形成胶体光子晶体。

公开(公告)号：US08016941B2

公开(公告)日：2011-09-13

申请号：US11671158

申请日：2007-02-05

申请人： Matthias Hierlemann ,  Ja-Hum Ku

发明人： Matthias Hierlemann ,  Ja-Hum Ku

IPC分类号： C30B11/00 ,  C30B5/00 ,  H01L21/337 ,  H01L27/12

CPC分类号： H01L21/823878 ,  H01L21/823807 ,  H01L29/045 ,  H01L29/78 ,  H01L29/7843 ,  H01L29/7846

摘要： A method and apparatus for crystallizing a semiconductor that includes a first layer having a first crystal lattice orientation and a second layer having a second crystal lattice orientation, comprising amorphizing at least a portion of the second layer, applying a stress to the second layer and heating the second layer above a recrystallization temperature.

摘要翻译： 一种用于结晶半导体的方法和装置，其包括具有第一晶格取向的第一层和具有第二晶格取向的第二层，包括使第二层的至少一部分非晶化，向第二层施加应力并加热 在再结晶温度以上的第二层。

公开(公告)号：US07803340B2

公开(公告)日：2010-09-28

申请号：US11663586

申请日：2005-09-22

申请人： Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki ,  Takashi Kawasaki ,  Masahiro Ibukiyama

发明人： Shinji Nozaki ,  Kazuo Uchida ,  Hiroshi Morisaki ,  Takashi Kawasaki ,  Masahiro Ibukiyama

IPC分类号： C01B15/14 ,  C01B33/20 ,  C01B33/12 ,  C01B25/00 ,  C01B33/00 ,  C01B35/00 ,  C01B15/00 ,  C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B28/02 ,  C07C1/00 ,  C07C2/00 ,  C07C4/00 ,  C07C5/00 ,  C07C6/00 ,  B01J19/12

CPC分类号： C01B33/113 ,  B82Y30/00 ,  C01P2004/64 ,  C09C1/30 ,  C09C1/3009 ,  C09K11/592

摘要： Crystalline silicon particles of nanometer order usable as a semiconductor element are provided by a method for producing SiOx particles, comprising irradiating SiOx (X is 0.5 or more and less than 2.0) particles each including therein an amorphous silicon particle having a particle diameter of 0.5 to 5 nm with light, and preferably a laser beam, to produce SiOx (X is 0.5 or more and less than 2.0) particles each including therein a crystalline silicon particle having a particle diameter of 1 to 10 nm.

摘要翻译： 通过制造SiO x粒子的方法提供可用作半导体元件的结晶硅粒子，其包括将包含粒径为0.5的非晶硅粒子的SiOx（X为0.5以上且小于等于2.0）的粒子照射到 5nm，优选为激光束，生成SiO x（X为0.5以上且小于2.0）的粒子，各粒径粒径为1〜10nm的结晶硅粒子。

公开(公告)号：US20070044706A1

公开(公告)日：2007-03-01

申请号：US11509735

申请日：2006-08-25

申请人： Sung-Kwan Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Yong-Hoon Son

发明人： Sung-Kwan Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Yong-Hoon Son

IPC分类号： C30B1/00 ,  C30B28/02 ,  C30B3/00 ,  C30B5/00

CPC分类号： C30B23/02 ,  C30B23/025 ,  C30B25/18 ,  C30B29/06 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02658 ,  H01L21/28525

摘要： In a method of forming a single crystalline structure and a method of manufacturing a semiconductor device by using the method of forming the single crystalline structure, a single crystalline seed having elements combining with oxygen to form a network former capable of being easily connected to a network of oxide glass is formed. The single crystalline seed is epitaxially grown to form a single crystalline structure.

摘要翻译： 在通过使用形成单晶结构的方法形成单晶结构的方法和制造半导体器件的方法中，具有与氧结合的元件以形成能够容易地连接到网络的网络形成器的单晶种子 形成氧化物玻璃。 将单晶种子外延生长以形成单晶结构。