Invention Grant
- Patent Title: Resistive memory and measurement system thereof
- Patent Title (中): 电阻记忆及其测量系统
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Application No.: US15019187Application Date: 2016-02-09
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Publication No.: US09543010B2Publication Date: 2017-01-10
- Inventor: Lih-Wei Lin , Chia-Hung Lin , Tsung-Huan Tsai , Ju-Chieh Cheng , I-Hsien Tseng
- Applicant: WINBOND ELECTRONICS CORP.
- Applicant Address: TW Taichung
- Assignee: WINBOND ELECTRONICS CORP.
- Current Assignee: WINBOND ELECTRONICS CORP.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW104105250A 20150216
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C29/50

Abstract:
A measurement system including a testing machine and a resistive memory is provided. The resistive memory includes a first storage cell. The first storage cell includes a transistor and a variable resistor. During a specific period, the testing machine provides a write voltage to change the state of the variable resistor. During a maintaining period, the testing machine maintains the level of the write voltage and measures the current passing through the variable resistor. When the current passing through the variable resistor does not arrive at a pre-determined value, the testing machine increases the level of the write voltage. Furthermore, a resistive memory utilizing the testing machine is also provided.
Public/Granted literature
- US20160240268A1 RESISTIVE MEMORY AND MEASUREMENT SYSTEM THEREOF Public/Granted day:2016-08-18
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