公开(公告)号：US20240087644A1

公开(公告)日：2024-03-14

申请号：US18457377

申请日：2023-08-29

Applicant: Winbond Electronics Corp.

Inventor： I-Hsien Tseng ,  Lung-Chi Cheng ,  Ju-Chieh Cheng ,  Jun-Yao Huang ,  Ping-Kun Wang

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0007 ,  G11C2013/0083

Abstract: A forming operation of resistive memory device is provided. The operation includes: applying a pre-forming gate voltage and a pre-forming bit line voltage to a target memory cell; performing a dense switching forming operation, wherein the dense switching forming operation includes alternately performing dense set operations and dense reset operations on the target memory cell, wherein the dense set operation includes applying a dense switching gate voltage and a dense set bit line voltage; and performing a normal set operation on the target memory cell, wherein the normal set operation includes applying a normal set gate voltage and a normal set bit line voltage to the target memory cell, the normal set gate voltage is greater than the pre-forming gate voltage and the dense switching gate voltage, and the normal set bit line voltage is less than the pre-forming bit line voltage and the dense set bit line voltage.

公开(公告)号：US20200027507A1

公开(公告)日：2020-01-23

申请号：US16103942

申请日：2018-08-15

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  Ju-Chieh Cheng ,  Tsung-Huan Tsai ,  I-Hsien Tseng

IPC: G11C13/00 ,  G11C5/14

Abstract: An operating method of a resistive memory storage apparatus includes: applying a forming voltage to a memory cell and obtaining a cell current of the memory cell; and determining whether to adjust the forming voltage and apply the adjusted forming voltage to the memory cell according to a magnitude relationship between the cell current and a reference current. The memory cell to which the forming voltage is applied operates in a heavy forming mode and serves as a one-time programmable memory device.

公开(公告)号：US10347336B1

公开(公告)日：2019-07-09

申请号：US16040552

申请日：2018-07-20

Applicant: Winbond Electronics Corp.

Inventor： Tsung-Huan Tsai ,  Lih-Wei Lin ,  I-Hsien Tseng ,  Wen-Ting Wang

IPC: G11C13/00 ,  G11C29/44

Abstract: The disclosure provides a method for obtaining optimal operating condition of a resistive random access memory (RRAM). The method includes: retrieving an RRAM chip and performing a forming operation and an initial reset operation thereto based on a first operating condition; segmenting the RRAM chip into blocks; performing a set operation to each of the blocks based on various operating voltages; obtaining a fail bit value of each of the blocks; generating an operating characteristic curve related to the RRAM chip based on the fail bit value of each of the blocks and the operating voltages, wherein the operating characteristic curve has a lowest fail bit value and an operating voltage window; and when the lowest fail bit value and the operating voltage window satisfy a first condition and a second condition, respectively, determining the first operating condition is an optimal operating condition of the RRAM chip.

公开(公告)号：US20190057738A1

公开(公告)日：2019-02-21

申请号：US16048350

申请日：2018-07-30

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  Ju-Chieh Cheng ,  Tsung-Huan Tsai ,  I-Hsien Tseng

IPC: G11C13/00

Abstract: A writing method of a resistive memory storage apparatus is provided. The writing method includes: applying a first set voltage on a memory cell, and acquiring a first reading current of the memory cell; applying a first disturbance voltage on the memory cell, and acquiring a second reading current of the memory cell; and determining to apply a second set voltage or a second disturbance voltage on the memory cell according to a magnitude relationship between the first reading current and the second reading current. An absolute value of the first disturbance voltage is smaller than an absolute value of a reset voltage, and an absolute value of the second disturbance voltage is smaller than an absolute value of the second set voltage. In addition, a resistive memory storage apparatus is also provided.

公开(公告)号：US09627059B2

公开(公告)日：2017-04-18

申请号：US14977667

申请日：2015-12-22

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  I-Hsien Tseng ,  Ju-Chieh Cheng ,  Chia-Hung Lin ,  Tsung-Huan Tsai ,  Po-Wei Huang

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0097 ,  G11C2013/0078 ,  G11C2013/0083 ,  G11C2213/79 ,  G11C2213/82

Abstract: A resistive memory and a data writing method for a resistive memory cell thereof are provided. The method includes: receiving and decoding a column address signal for generating a decoded result, and providing a word line voltage to a word line of the resistive memory cell; providing a constant current to one of a bit line and a source line of the resistive memory cell, and coupling a reference ground voltage to another one of the bit line and the source line of the resistive memory cell.

公开(公告)号：US09620208B2

公开(公告)日：2017-04-11

申请号：US15190569

申请日：2016-06-23

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  Tsung-Huan Tsai ,  Chia-Hung Lin ,  I-Hsien Tseng ,  Ju-Chieh Cheng

IPC: G11C11/00 ,  G11C13/00 ,  G11C5/14

CPC classification number: G11C13/0069 ,  G11C5/147 ,  G11C13/0002 ,  G11C13/004 ,  G11C13/0064 ,  G11C2013/0045 ,  G11C2013/0066

Abstract: A memory-programming device includes a voltage generator, a resistive random-access memory, a current detector, and a controller. The voltage generator is configured to generate a program voltage. The resistive random-access memory receives the program voltage to generate a program current. The current detector detects the program current. The controller executes a program procedure. The program procedure includes: gradually ramping up the program voltage by the voltage generator and detecting the program current by the current detector; discovering the maximum of the program current to be a reference current; continuing to ramp up the program voltage by the voltage generator and determining whether the program current detected by the current detector is not less than the reference current; controlling the voltage generator to stop generating the program voltage when the program current is not less than the reference current.

公开(公告)号：US20160276027A1

公开(公告)日：2016-09-22

申请号：US14977667

申请日：2015-12-22

Applicant: Winbond Electronics Corp.

Inventor： Lih-Wei Lin ,  I-Hsien Tseng ,  Ju-Chieh Cheng ,  Chia-Hung Lin ,  Tsung-Huan Tsai ,  Po-Wei Huang

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0097 ,  G11C2013/0078 ,  G11C2013/0083 ,  G11C2213/79 ,  G11C2213/82

Abstract: A resistive memory and a data writing method for a resistive memory cell thereof are provided. The method includes: receiving and decoding a column address signal for generating a decoded result, and providing a word line voltage to a word line of the resistive memory cell; providing a constant current to one of a bit line and a source line of the resistive memory cell, and coupling a reference ground voltage to another one of the bit line and the source line of the resistive memory cell.

Abstract translation: 提供了一种用于其电阻式存储单元的电阻式存储器和数据写入方法。 该方法包括：接收和解码用于产生解码结果的列地址信号，并将字线电压提供给电阻存储器单元的字线; 向电阻存储单元的位线和源极线之一提供恒定电流，以及将参考接地电压耦合到电阻存储单元的位线和源极线中的另一个。

公开(公告)号：US09691980B1

公开(公告)日：2017-06-27

申请号：US15332393

申请日：2016-10-24

Applicant: Winbond Electronics Corp.

Inventor： Chia-Hung Lin ,  Lih-Wei Lin ,  I-Hsien Tseng ,  Tsung-Huan Tsai

IPC: H01L45/00 ,  G11C13/00 ,  G11C29/04 ,  H01L21/66

CPC classification number: H01L45/1641 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C29/04 ,  G11C29/06 ,  G11C29/50008 ,  G11C29/50012 ,  G11C29/50016 ,  G11C2013/0083 ,  G11C2029/0403 ,  G11C2029/5002 ,  G11C2029/5006 ,  H01L22/20 ,  H01L45/146 ,  H01L45/1608

Abstract: A method for forming a memory device is provided. The method includes forming a plurality of memory cells. The method also includes performing a first baking on the memory cells. The method further includes setting a specified current, and after performing the first baking, performing a test process on the memory cells. The test process includes reading the current of the memory cells. When the read current of the memory cells is larger than or equal to the specified current, the test process of the memory cell is done. When the read current of the memory cells is smaller than the specified current, a re-forming process is performed on the memory cells to form a plurality of re-formed memory cells, and then the test process is performed on the re-formed memory cells.

公开(公告)号：US09543010B2

公开(公告)日：2017-01-10

申请号：US15019187

申请日：2016-02-09

Applicant: WINBOND ELECTRONICS CORP.

Inventor： Lih-Wei Lin ,  Chia-Hung Lin ,  Tsung-Huan Tsai ,  Ju-Chieh Cheng ,  I-Hsien Tseng

IPC: G11C11/00 ,  G11C13/00 ,  G11C29/50

CPC classification number: G11C13/0069 ,  G11C13/0064 ,  G11C29/50008 ,  G11C2013/0066 ,  G11C2013/0083 ,  G11C2013/0092 ,  G11C2029/5006 ,  G11C2213/79 ,  G11C2213/82

Abstract: A measurement system including a testing machine and a resistive memory is provided. The resistive memory includes a first storage cell. The first storage cell includes a transistor and a variable resistor. During a specific period, the testing machine provides a write voltage to change the state of the variable resistor. During a maintaining period, the testing machine maintains the level of the write voltage and measures the current passing through the variable resistor. When the current passing through the variable resistor does not arrive at a pre-determined value, the testing machine increases the level of the write voltage. Furthermore, a resistive memory utilizing the testing machine is also provided.

Abstract translation: 提供了包括测试机和电阻式存储器的测量系统。 电阻性存储器包括第一存储单元。 第一存储单元包括晶体管和可变电阻器。 在特定的时间段内，测试机提供写入电压来改变可变电阻的状态。 在维护期间，测试机器保持写入电压的电平并测量通过可变电阻器的电流。 当通过可变电阻器的电流未达到预定值时，测试机器增加写入电压的电平。 此外，还提供了利用测试机器的电阻性存储器。