Invention Grant
US09543441B2 Methods, apparatus and system for fabricating high performance finFET device
有权
用于制造高性能finFET器件的方法，装置和系统
- Patent Title: Methods, apparatus and system for fabricating high performance finFET device
- Patent Title (中): 用于制造高性能finFET器件的方法，装置和系统
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Application No.: US14645121Application Date: 2015-03-11
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Publication No.: US09543441B2Publication Date: 2017-01-10
- Inventor: Ki Young Lee , Byoung-Gi Min , Kijik Lee
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/306 ; H01L29/78 ; H01L27/085 ; H01L29/66 ; H01L21/324 ; H01L21/02 ; H01L29/06
Abstract:
At least one method, apparatus and system disclosed herein fin field effect transistor (finFET) comprising a bulbous fin head. A fin of a gate of a transistor is formed. A first recess step is performed for striping a hard mask material by a first dimension to expose a first portion of the fin. An epitaxy layer is formed upon the first portion. An oxidation process is performed upon the fin. An oxide removal process is performed upon the fin to provide a bulbous shape upon the first portion.
Public/Granted literature
- US20160268435A1 METHODS, APPARATUS AND SYSTEM FOR FABRICATING HIGH PERFORMANCE FINFET DEVICE Public/Granted day:2016-09-15
Information query
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