公开(公告)号：US09543441B2

公开(公告)日：2017-01-10

申请号：US14645121

申请日：2015-03-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ki Young Lee ,  Byoung-Gi Min ,  Kijik Lee

IPC: H01L21/20 ,  H01L21/306 ,  H01L29/78 ,  H01L27/085 ,  H01L29/66 ,  H01L21/324 ,  H01L21/02 ,  H01L29/06

CPC classification number: H01L29/7853 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/324 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/66795 ,  H01L29/66818

Abstract: At least one method, apparatus and system disclosed herein fin field effect transistor (finFET) comprising a bulbous fin head. A fin of a gate of a transistor is formed. A first recess step is performed for striping a hard mask material by a first dimension to expose a first portion of the fin. An epitaxy layer is formed upon the first portion. An oxidation process is performed upon the fin. An oxide removal process is performed upon the fin to provide a bulbous shape upon the first portion.

Abstract translation: 本文公开的至少一种方法，装置和系统，鳍状场效应晶体管（finFET）包括球状翅片头。 形成晶体管的栅极的鳍。 执行第一凹陷步骤，以通过第一尺寸对硬掩模材料进行剥离以暴露鳍的第一部分。 在第一部分上形成外延层。 在翅片上进行氧化处理。 在翅片上进行氧化物去除处理以在第一部分上提供球形形状。

公开(公告)号：US10297672B2

公开(公告)日：2019-05-21

申请号：US15649227

申请日：2017-07-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Seong Yeol Mun ,  Kwan-Yong Lim ,  Kijik Lee

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/51 ,  H01L27/088 ,  H01L21/28 ,  H01L21/02 ,  H01L29/49

Abstract: A method of forming a 14 nm triple gate by adding a MG in the dual gate process and the resulting device are provided. Embodiments include forming an EG region, a MG region and a SG region in a first, second and third portions of a Si substrate, respectively; forming an IL over the EG, MG and SG regions; oxidizing the IL; forming a HK dielectric layer over the IL; performing PDA on the HK dielectric layer; forming a PSA TiN layer over the HK dielectric layer; forming an a-Si cap layer over the PSA TiN layer; forming a photoresist over the a-Si cap layer in the EG and SG regions; removing the a-Si cap layer in the MG region, exposing the PSA TiN layer; stripping the photoresist; and annealing the a-Si cap and PSA TiN layers.

公开(公告)号：US20160268435A1

公开(公告)日：2016-09-15

申请号：US14645121

申请日：2015-03-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ki Young Lee ,  Byoung-Gi Min ,  Kijik Lee

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L21/324

CPC classification number: H01L29/7853 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/324 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/66795 ,  H01L29/66818

Abstract: At least one method, apparatus and system disclosed herein fin field effect transistor (finFET) comprising a bulbous fin head. A fin of a gate of a transistor is formed. A first recess step is performed for striping a hard mask material by a first dimension to expose a first portion of the fin. An epitaxy layer is formed upon the first portion. An oxidation process is performed upon the fin. An oxide removal process is performed upon the fin to provide a bulbous shape upon the first portion.

Abstract translation: 本文公开的至少一种方法，装置和系统，鳍状场效应晶体管（finFET）包括球状翅片头。 形成晶体管的栅极的鳍。 执行第一凹陷步骤，以通过第一尺寸对硬掩模材料进行剥离以暴露鳍的第一部分。 外延层形成在第一部分上。 在翅片上进行氧化处理。 在翅片上进行氧化物去除处理以在第一部分上提供球形形状。