Invention Grant
- Patent Title: Semiconductor device and inverter using same
- Patent Title (中): 半导体器件和逆变器使用相同
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Application No.: US14440341Application Date: 2014-07-04
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Publication No.: US09543858B2Publication Date: 2017-01-10
- Inventor: Osamu Kusumoto , Hideki Nakata , Keiji Akamatsu , Masao Uchida
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: JP2013-144245 20130710
- International Application: PCT/JP2014/003561 WO 20140704
- International Announcement: WO2015/004891 WO 20150115
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/112 ; H01L29/74 ; H01L29/06 ; H02M7/5387 ; H01L21/76 ; H02M1/08 ; H02M1/32 ; H02M7/00 ; H02M7/797 ; H01L21/82 ; H01L29/10 ; H01L29/16 ; H01L29/78 ; H02M1/00
Abstract:
A semiconductor device includes a gate pad, a first source pad and a second source pad insulated from each other, a drain pad, a main region, and a sense region for detecting a forward current and a reverse current. The main region and the sense region each include a plurality of unit cells which are in parallel connection, the number of unit cells in the sense region being smaller than the number of unit cells in the main region. A source electrode of any unit cell in the main region is connected to the first source pad, and a source electrode of any unit cell in the sense region is connected to the second source pad.
Public/Granted literature
- US20150280611A1 SEMICONDUCTOR DEVICE AND INVERTER USING SAME Public/Granted day:2015-10-01
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