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US09548098B2 Non-destructive write/read leveling 有权
无损写入/读取调平

Non-destructive write/read leveling
摘要:
In some examples, a memory device is configured with non-volatile memory array(s) having one or more associated volatile memory arrays. The memory device may include a non-destructive write mode configured to prevent access to the non-volatile memory array(s) during an initiation or calibration sequence performed by the memory device or an electronic device associated with the memory device to calibrate read and write access timing associated with the memory device.
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