发明授权
- 专利标题: Non-destructive write/read leveling
- 专利标题(中): 无损写入/读取调平
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申请号: US15041247申请日: 2016-02-11
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公开(公告)号: US09548098B2公开(公告)日: 2017-01-17
- 发明人: Thomas Andre
- 申请人: Everspin Technologies, Inc.
- 申请人地址: US AZ Chandler
- 专利权人: Everspin Technologies, Inc.
- 当前专利权人: Everspin Technologies, Inc.
- 当前专利权人地址: US AZ Chandler
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C11/16 ; G11C7/20 ; G11C29/02 ; G11C14/00 ; G11C29/04
摘要:
In some examples, a memory device is configured with non-volatile memory array(s) having one or more associated volatile memory arrays. The memory device may include a non-destructive write mode configured to prevent access to the non-volatile memory array(s) during an initiation or calibration sequence performed by the memory device or an electronic device associated with the memory device to calibrate read and write access timing associated with the memory device.
公开/授权文献
- US20160163371A1 NON-DESTRUCTIVE WRITE/READ LEVELING 公开/授权日:2016-06-09
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