Invention Grant
- Patent Title: Self-aligned multiple spacer patterning schemes for advanced nanometer technology
- Patent Title (中): 用于先进纳米技术的自对准多间隔图案方案
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Application No.: US14730194Application Date: 2015-06-03
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Publication No.: US09548201B2Publication Date: 2017-01-17
- Inventor: Ying Zhang , Uday Mitra , Praburam Gopalraja , Srinivas D. Nemani , Hua Chung
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L23/544 ; H01L21/302 ; H01L21/461 ; H01L21/033 ; H01L21/768 ; H01L21/311
Abstract:
The present disclosure provides forming nanostructures with precision dimension control and minimum lithographic related errors for features with dimension under 14 nanometers and beyond. A self-aligned multiple spacer patterning (SAMSP) process is provided herein and the process utilizes minimum lithographic exposure process, but rather multiple deposition/etching process to incrementally reduce feature sizes formed in the mask along the manufacturing process, until a desired extreme small dimension nanostructures are formed in a mask layer.
Public/Granted literature
- US20150371852A1 SELF-ALIGNED MULTIPLE SPACER PATTERNING SCHEMES FOR ADVANCED NANOMETER TECHNOLOGY Public/Granted day:2015-12-24
Information query
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