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    Method to remove III-V materials in high aspect ratio structures
    3.
    发明授权
    Method to remove III-V materials in high aspect ratio structures 有权

    公开(公告)号：US10770568B2

    公开(公告)日：2020-09-08

    申请号：US16277634

    申请日：2019-02-15

    申请人： Applied Materials, Inc.

    发明人： Xinyu Bao ,  Ying Zhang ,  Qingjun Zhou ,  YungChen Lin

    IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/762

    摘要： Methods for forming semiconductor devices, such as FinFETs, are provided. In an embodiment, a fin structure processing method includes removing a portion of a first fin of a plurality of fins formed on a substrate to expose a surface of a remaining portion of the first fin, wherein the fins are adjacent to dielectric material structures formed on the substrate; performing a deposition operation to form features on the surface of the remaining portion of the first fin by depositing a Group III-V semiconductor material in a substrate processing environment; and performing an etching operation to etch the features with an etching gas to form a plurality of openings between adjacent dielectric material structures, wherein the etching operation is performed in the same chamber as the deposition operation.

    Method for patterning a material layer with desired dimensions
    4.
    发明授权
    Method for patterning a material layer with desired dimensions 有权

    公开(公告)号：US10453684B1

    公开(公告)日：2019-10-22

    申请号：US15975408

    申请日：2018-05-09

    申请人： Applied Materials, Inc.

    发明人： Ying Zhang ,  Lin Zhou

    IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/683 ,  H01L21/3213 ,  C23C16/455

    摘要： Methods for patterning a film stack are provided. In one embodiment, a method for patterning a film stack disposed on a substrate includes performing a first etching process to etch a film stack disposed on a substrate, wherein the film stack includes a patterned photoresist layer disposed on an upper layer on a lower layer disposed on the substrate, wherein the patterned photoresist layer comprises openings defined between features and the features have a first pitch, wherein the first etching process removes between about 40 percent and about 95 percent of the lower layer exposed by the patterned photoresist layer from the film stack, performing a second etching process on the film stack, and upon completion of the second etching process, transferring the features into the upper or lower layer in the film stack having a second pitch, wherein the second pitch is shorter than the first pitch.

    Self-aligned EPI contact flow
    6.
    发明授权
    Self-aligned EPI contact flow 有权

    公开(公告)号：US10269647B2

    公开(公告)日：2019-04-23

    申请号：US15811188

    申请日：2017-11-13

    申请人： Applied Materials, Inc.

    发明人： Ying Zhang ,  Schubert S. Chu ,  Xinyu Bao ,  Regina Germanie Freed ,  Hua Chung

    IPC分类号： H01L21/8234 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8238

    摘要： Methods for forming semiconductor devices, such as FinFETs, are provided. In one embodiment, a method for forming a FinFET device includes removing a portion of each fin of a plurality of fins, and a remaining portion of each fin is recessed from a dielectric surface. The method further includes forming a feature on the remaining portion of each fin, filling gaps formed between adjacent features with a dielectric material, removing the features, and forming a fill material on the remaining portion of each fin. Because the shape of the features is controlled, the shape of the fill material can be controlled.