公开(公告)号：US10439047B2

公开(公告)日：2019-10-08

申请号：US15896827

申请日：2018-02-14

Applicant: Applied Materials, Inc.

Inventor： Yung-Chen Lin ,  Qingjun Zhou ,  Ying Zhang

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/308 ,  H01L21/306 ,  H01L21/8234

Abstract: Embodiments described herein relate to substrate processing methods. The methods include forming a patterned hardmask material on a substrate, forming first mandrel structures on exposed regions of the substrate, and depositing a gap fill material on the substrate over the hardmask material and the first mandrel structures. The first mandrel structures are removed to form second mandrel structures comprising the hardmask material and the gap fill material and the substrate is etched using the second mandrel structures as a mask to form fin structures.

公开(公告)号：US20180096825A1

公开(公告)日：2018-04-05

申请号：US15831224

申请日：2017-12-04

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Vahid Firouzdor ,  Ying Zhang

IPC: H01J37/32 ,  C23C14/00 ,  C23C14/08

CPC classification number: H01J37/32642 ,  C23C14/0015 ,  C23C14/0031 ,  C23C14/08 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/1317

Abstract: A ring shaped body includes a top flat region, a ring inner side and a ring outer side. The ring inner side comprises an approximately vertical wall. A conformal protective layer comprising 40 mol % to less than 100 mol % of Y2O3 and above 0 mol % to less than 60 mol % of ZrO2 is disposed on at least the top flat region, the ring inner side and the ring outer side of the ring shaped body by ion assisted deposition. The protective layer has a first thickness of less than 300 μm on the top flat region and a second thickness on the vertical wall of the ring inner side, where the second thickness is 45-70% of the first thickness.

公开(公告)号：US09869012B2

公开(公告)日：2018-01-16

申请号：US15413198

申请日：2017-01-23

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Vahid Firouzdor ,  Ying Zhang

IPC: C23C14/00 ,  B65D43/02 ,  H01L21/67 ,  C23C4/11 ,  C23C4/12 ,  C23C4/04 ,  C23C4/10 ,  C23C4/01 ,  C23C4/134 ,  C23C4/14 ,  C23C4/16 ,  C23C14/08 ,  H01J37/32

CPC classification number: H01L21/67023 ,  B65D43/02 ,  C23C4/01 ,  C23C4/04 ,  C23C4/10 ,  C23C4/11 ,  C23C4/12 ,  C23C4/134 ,  C23C4/14 ,  C23C4/16 ,  C23C14/0015 ,  C23C14/0021 ,  C23C14/0031 ,  C23C14/0036 ,  C23C14/0052 ,  C23C14/0084 ,  C23C14/0094 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/088 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32513 ,  H01J2237/334 ,  H01L21/67063 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/67086 ,  Y10T428/131 ,  Y10T428/1317 ,  Y10T428/139 ,  Y10T428/1393

Abstract: A method of manufacturing an article comprises performing ion assisted deposition (IAD) to deposit a protective layer on at least one surface of the article, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of 10 micro-inches or less.

公开(公告)号：US09812341B2

公开(公告)日：2017-11-07

申请号：US15413192

申请日：2017-01-23

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Vahid Firouzdor ,  Ying Zhang

IPC: H01L21/67 ,  B65D43/02 ,  H01J37/32 ,  C23C14/00 ,  C23C14/08

CPC classification number: H01L21/67023 ,  B65D43/02 ,  C23C4/01 ,  C23C4/04 ,  C23C4/10 ,  C23C4/11 ,  C23C4/12 ,  C23C4/134 ,  C23C4/14 ,  C23C4/16 ,  C23C14/0015 ,  C23C14/0021 ,  C23C14/0031 ,  C23C14/0036 ,  C23C14/0052 ,  C23C14/0084 ,  C23C14/0094 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/088 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32513 ,  H01J2237/334 ,  H01L21/67063 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/67086 ,  Y10T428/131 ,  Y10T428/1317 ,  Y10T428/139 ,  Y10T428/1393

Abstract: A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.

公开(公告)号：US20170301522A1

公开(公告)日：2017-10-19

申请号：US15640287

申请日：2017-06-30

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Vahid Firouzdor ,  Ying Zhang

IPC: H01J37/32 ,  C23C14/00 ,  C23C14/08

Abstract: A ring shaped body includes a top flat region, a ring inner side and a ring outer side. The ring inner side comprises an approximately vertical wall. A conformal protective layer is disposed on at least the top flat region, the ring inner side and the ring outer side of the ring shaped body. The protective layer has a first thickness of less than 300 μm on the top flat region and a second thickness on the vertical wall of the ring inner side, where the second thickness is 45-70% of the first thickness.

公开(公告)号：US09725799B2

公开(公告)日：2017-08-08

申请号：US14562339

申请日：2014-12-05

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K. Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC: C23C14/34 ,  C23C14/08 ,  C04B41/50 ,  C23C14/46 ,  C23C14/58 ,  H01J37/32 ,  C04B41/87 ,  C04B41/89 ,  C04B41/00 ,  C04B41/52 ,  C04B35/505 ,  C04B35/622

CPC classification number: C23C14/088 ,  C04B35/00 ,  C04B35/505 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/4529 ,  C04B41/5045 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3246 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/3873 ,  C04B2235/428 ,  C04B2235/445 ,  C23C14/08 ,  C23C14/083 ,  C23C14/46 ,  C23C14/5806 ,  H01J37/32477 ,  Y10T428/26 ,  Y10T428/265 ,  C04B35/10 ,  C04B35/50 ,  C04B35/14 ,  C04B35/584 ,  C04B35/565 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/5035 ,  C04B2103/54

Abstract: A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 μm.

公开(公告)号：US09583369B2

公开(公告)日：2017-02-28

申请号：US14034315

申请日：2013-09-23

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Vahid Firouzdor ,  Ying Zhang

IPC: H01L21/67 ,  B65D43/02 ,  C23C14/00 ,  C23C14/08 ,  H01J37/32

CPC classification number: H01L21/67023 ,  B65D43/02 ,  C23C4/01 ,  C23C4/04 ,  C23C4/10 ,  C23C4/11 ,  C23C4/12 ,  C23C4/134 ,  C23C4/14 ,  C23C4/16 ,  C23C14/0015 ,  C23C14/0021 ,  C23C14/0031 ,  C23C14/0036 ,  C23C14/0052 ,  C23C14/0084 ,  C23C14/0094 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/088 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32513 ,  H01J2237/334 ,  H01L21/67063 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/67086 ,  Y10T428/131 ,  Y10T428/1317 ,  Y10T428/139 ,  Y10T428/1393

Abstract: A method of manufacturing an article comprises providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of 10 micro-inches or less.

Abstract translation: 制造制品的方法包括提供用于蚀刻反应器的盖或喷嘴。 然后进行离子辅助沉积（IAD）以在盖或喷嘴的至少一个表面上沉积保护层，其中保护层是具有小于300μm的厚度的等离子体耐受稀土氧化物膜，平均表面粗糙度 为10微英寸或更小。

公开(公告)号：US09508831B2

公开(公告)日：2016-11-29

申请号：US14320597

申请日：2014-06-30

Applicant: Applied Materials, Inc.

Inventor： Ying Zhang ,  Hua Chung

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/311 ,  H01L29/06 ,  H01L29/10 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/16 ,  H01L29/161 ,  H01L21/265 ,  H01L21/324 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/775

CPC classification number: H01L29/66795 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/02233 ,  H01L21/02236 ,  H01L21/02252 ,  H01L21/02359 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/265 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/324 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/66666 ,  H01L29/775

Abstract: Embodiments of the present disclosure provide methods for forming nanowire structures with desired materials for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes in a suspended nanowire structure on a substrate, the suspended nanowire includes multiple material layers having a spaced apart relationship repeatedly formed in the suspended nanowire structure, wherein the material layer includes a coating layer coated on an outer surface of a main body formed in the material layer, selectively removing a first portion of the coating layer from the material layers to expose the underlying main body of the material layers while maintaining a second portion of the coating layer remaining on the material layers, laterally etching the main body of the material layers exposed by removal of the coating layer, and selectively growing film layers on the exposed main body of the material layer.

Abstract translation: 本公开的实施例提供了用于形成用于半导体芯片的鳍式场效应晶体管（FinFET）的三维（3D）堆叠的所需材料的纳米线结构的方法。 在一个实例中，在衬底上形成纳米线结构的方法包括在衬底上的悬浮的纳米线结构中，悬浮的纳米线包括在悬浮的纳米线结构中重复形成间隔关系的多个材料层，其中材料层包括涂层 层涂覆在形成在材料层中的主体的外表面上，从材料层选择性地去除涂层的第一部分，以暴露材料层的下面的主体，同时保持涂层的第二部分保持在 材料层，横向蚀刻通过去除涂层而暴露的材料层的主体，以及选择性地在材料层的暴露的主体上生长膜层。

公开(公告)号：US09401310B2

公开(公告)日：2016-07-26

申请号：US14170887

申请日：2014-02-03

Applicant: Applied Materials, Inc.

Inventor： Ying Zhang ,  Hua Chung

IPC: H01L21/8234 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/823431 ,  H01L21/0334 ,  H01L21/0337 ,  H01L21/31144 ,  H01L29/66795

Abstract: Embodiments may include a method of semiconductor patterning including forming a first trench bordered by a first spacer material. The method may involve forming a second trench bordered by a second spacer material formed conformally around the first spacer material. The method may include filling the second trench with a semiconductor material.

Abstract translation: 实施例可以包括半导体图案化的方法，包括形成由第一间隔物材料边界的第一沟槽。 该方法可以包括形成由第一间隔物材料保形地形成的第二间隔物材料边界的第二沟槽。 该方法可以包括用半导体材料填充第二沟槽。

公开(公告)号：US20150221556A1

公开(公告)日：2015-08-06

申请号：US14170887

申请日：2014-02-03

Applicant: Applied Materials, Inc.

Inventor： Ying Zhang ,  Hua Chung

IPC: H01L21/8234 ,  H01L21/033 ,  H01L21/02

CPC classification number: H01L21/823431 ,  H01L21/0334 ,  H01L21/0337 ,  H01L21/31144 ,  H01L29/66795

Abstract: Embodiments may include a method of semiconductor patterning including forming a first trench bordered by a first spacer material. The method may involve forming a second trench bordered by a second spacer material formed conformally around the first spacer material. The method may include filling the second trench with a semiconductor material.

Abstract translation: 实施例可以包括半导体图案化的方法，包括形成由第一间隔物材料边界的第一沟槽。 该方法可以包括形成由第一间隔物材料保形地形成的第二间隔物材料边界的第二沟槽。 该方法可以包括用半导体材料填充第二沟槽。