Invention Grant
- Patent Title: Method of processing a substrate and a method of processing a wafer
- Patent Title (中): 处理衬底的方法和处理晶片的方法
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Application No.: US14453639Application Date: 2014-08-07
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Publication No.: US09548248B2Publication Date: 2017-01-17
- Inventor: Frank Pueschner , Bernhard Schaetzler , Franz Gabler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner mbB
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/302 ; H01L21/304 ; H01L21/56 ; H01L23/31

Abstract:
According to various embodiments, a method of processing a substrate may include: forming a plurality of trenches into a substrate between two chip structures in the substrate, the trenches defining at least one pillar between the two chip structures and a sidewall on each of said two chip structures; disposing an auxiliary carrier on the substrate to hold the chip structures and the at least one pillar; at least partially filling the trenches with encapsulation material to cover the at least one pillar and the sidewalls, thereby at least partially encapsulating the chip structures; removing a portion of the encapsulation material to expose at least a portion of the at least one pillar; and at least partially removing the at least one pillar.
Public/Granted literature
- US20160042998A1 METHOD OF PROCESSING A SUBSTRATE AND A METHOD OF PROCESSING A WAFER Public/Granted day:2016-02-11
Information query
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