公开(公告)号：US20160042998A1

公开(公告)日：2016-02-11

申请号：US14453639

申请日：2014-08-07

Applicant: Infineon Technologies AG

Inventor： Frank Pueschner ,  Bernhard Schaetzler ,  Franz Gabler

IPC: H01L21/82 ,  H01L21/302 ,  H01L21/56

CPC classification number: H01L21/82 ,  H01L21/302 ,  H01L21/561 ,  H01L23/3114 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to various embodiments, a method of processing a substrate may include: forming a plurality of trenches into a substrate between two chip structures in the substrate, the trenches defining at least one pillar between the two chip structures and a sidewall on each of said two chip structures; disposing an auxiliary carrier on the substrate to hold the chip structures and the at least one pillar; at least partially filling the trenches with encapsulation material to cover the at least one pillar and the sidewalls, thereby at least partially encapsulating the chip structures; removing a portion of the encapsulation material to expose at least a portion of the at least one pillar; and at least partially removing the at least one pillar.

Abstract translation: 根据各种实施例，处理衬底的方法可以包括：在衬底中的两个芯片结构之间形成多个沟槽到衬底中，所述沟槽限定两个芯片结构之间的至少一个柱和在所述两个芯片结构中的每一个上的侧壁 芯片结构; 在所述基板上设置辅助载体以保持所述芯片结构和所述至少一个支柱; 至少部分地用封装材料填充沟槽以覆盖所述至少一个柱和侧壁，从而至少部分地封装所述芯片结构; 去除所述封装材料的一部分以暴露所述至少一个支柱的至少一部分; 并且至少部分地去除所述至少一个支柱。

公开(公告)号：US09548248B2

公开(公告)日：2017-01-17

申请号：US14453639

申请日：2014-08-07

Applicant: Infineon Technologies AG

Inventor： Frank Pueschner ,  Bernhard Schaetzler ,  Franz Gabler

IPC: H01L21/82 ,  H01L21/302 ,  H01L21/304 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L21/82 ,  H01L21/302 ,  H01L21/561 ,  H01L23/3114 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to various embodiments, a method of processing a substrate may include: forming a plurality of trenches into a substrate between two chip structures in the substrate, the trenches defining at least one pillar between the two chip structures and a sidewall on each of said two chip structures; disposing an auxiliary carrier on the substrate to hold the chip structures and the at least one pillar; at least partially filling the trenches with encapsulation material to cover the at least one pillar and the sidewalls, thereby at least partially encapsulating the chip structures; removing a portion of the encapsulation material to expose at least a portion of the at least one pillar; and at least partially removing the at least one pillar.

Abstract translation: 根据各种实施例，处理衬底的方法可以包括：在衬底中的两个芯片结构之间形成多个沟槽到衬底中，所述沟槽限定两个芯片结构之间的至少一个柱和在所述两个芯片结构中的每一个上的侧壁 芯片结构; 在所述基板上设置辅助载体以保持所述芯片结构和所述至少一个支柱; 至少部分地用封装材料填充沟槽以覆盖所述至少一个柱和侧壁，从而至少部分地封装所述芯片结构; 去除所述封装材料的一部分以暴露所述至少一个支柱的至少一部分; 并且至少部分地去除所述至少一个支柱。