Invention Grant
- Patent Title: Backside illuminated image sensor and method of manufacturing the same
- Patent Title (中): 背面照明图像传感器及其制造方法
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Application No.: US14322469Application Date: 2014-07-02
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Publication No.: US09548329B2Publication Date: 2017-01-17
- Inventor: Huan-En Lin , Shiu-Ko Jangjian , Volume Chien , Fu-Tsun Tsai , Yung-Lung Hsu , Chi-Cherng Jeng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agent Chun-Ming Shih
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A backside illuminated (BSI) image sensor device includes: a first substrate including a front side and a back side; a second substrate bonded with the first substrate on the front side; and a blocking layer between the first substrate and the second substrate. The first substrate includes an image sensor, and the image sensor is configured to collect incident light entering from the back side. The second substrate includes a circuit coupled with the image sensor. The blocking layer is configured to block radiation induced by the circuit.
Public/Granted literature
- US20160005781A1 BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-01-07
Information query
IPC分类: