Invention Grant
- Patent Title: Magnetoresistive structure having two dielectric layers, and method of manufacturing same
- Patent Title (中): 具有两个电介质层的磁阻结构及其制造方法
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Application No.: US14797172Application Date: 2015-07-12
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Publication No.: US09548442B2Publication Date: 2017-01-17
- Inventor: Sanjeev Aggarwal , Kerry Nagel , Jason Janesky
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; H01L43/12
Abstract:
A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers. The method of manufacture comprises at least two etch processes and at least an encapsulation process interposed therebetween wherein the encapsulation is formed on sidewalls of the partially formed magnetoresistive stack between etch processes.
Public/Granted literature
- US20150318465A1 Magnetoresistive Structure having Two Dielectric Layers, and Method of Manufacturing Same Public/Granted day:2015-11-05
Information query
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