Invention Grant
- Patent Title: Amorphous alloy space for perpendicular MTJs
- Patent Title (中): 用于垂直MTJ的无定形合金空间
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Application No.: US14940996Application Date: 2015-11-13
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Publication No.: US09548445B2Publication Date: 2017-01-17
- Inventor: Kangho Lee , Wei-Chuan Chen , Seung Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Elaine Lo
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L43/02 ; H01L43/12 ; H01L43/08 ; G11C11/15 ; G11C11/16
Abstract:
A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers. An amorphous alloy spacer is deposited between the TMR enhancement buffer layer and the reference layers to enhance TMR. The amorphous alloy spacer blocks template effects of face centered cubic (fcc) oriented pinned layers and provides strong coupling between the pinned layers and the TMR enhancement buffer layer to ensure full perpendicular magnetization.
Public/Granted literature
- US20160111634A1 AMORPHOUS ALLOY SPACER FOR PERPENDICULAR MTJS Public/Granted day:2016-04-21
Information query
IPC分类:
