Invention Grant
US09548446B2 Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ)
有权
用于垂直磁隧道结的合成反铁磁体（SAF）耦合自由层（P-MTJ）
- Patent Title: Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ)
- Patent Title (中): 用于垂直磁隧道结的合成反铁磁体（SAF）耦合自由层（P-MTJ）
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Application No.: US15133018Application Date: 2016-04-19
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Publication No.: US09548446B2Publication Date: 2017-01-17
- Inventor: Chando Park , Matthias Georg Gottwald , Kangho Lee , Seung Hyuk Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L43/12 ; H01L43/08 ; G11C11/16 ; H01L43/02
Abstract:
A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.
Public/Granted literature
- US20160233418A1 SYNTHETIC ANTIFERROMAGNET (SAF) COUPLED FREE LAYER FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION (P-MTJ) Public/Granted day:2016-08-11
Information query
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