Invention Grant
- Patent Title: Memory timing self-calibration
- Patent Title (中): 存储器定时自校准
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Application No.: US15095347Application Date: 2016-04-11
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Publication No.: US09552856B2Publication Date: 2017-01-24
- Inventor: Qiang Tang , Ramin Ghodsi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C11/4076 ; G11C7/10 ; G11C16/32 ; G11C29/02 ; G11C16/10 ; G11C11/4093 ; G11C29/04

Abstract:
Methods for memory input timing self-calibration, apparatuses for input timing self-calibration, and systems are disclosed. One such method includes sequentially programming a plurality of delay trim settings into a delay circuit of a data path. The data path can include a data latch coupled to the delay circuit. A clock is coupled to the data latch to clock data into the data latch. Transitions of the data are substantially aligned with transitions of the clock. An output of the data latch is read after each delay trim setting is programmed. A boundary is determined between a first output state of the data latch and a second output state of the data latch wherein the boundary is associated with a particular delay trim setting of the plurality of delay trim settings. The particular delay trim setting is programmed into the delay circuit.
Public/Granted literature
- US20160225420A1 MEMORY TIMING SELF-CALIBRATION Public/Granted day:2016-08-04
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