Invention Grant
- Patent Title: Semiconductor devices and methods of fabricating the same
- Patent Title (中): 半导体器件及其制造方法
-
Application No.: US15205168Application Date: 2016-07-08
-
Publication No.: US09558994B2Publication Date: 2017-01-31
- Inventor: Wookyung You , Sanghoon Ahn , Sangho Rha , Jongmin Baek , Nae-In Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0041157 20140407
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/485 ; H01L23/522 ; H01L23/528 ; H01L23/532

Abstract:
A semiconductor device includes a substrate including a first region and a second region, first conductive patterns disposed on the first region and spaced apart from each other by a first distance, second conductive patterns disposed on the second region and spaced apart from each other by a second distance greater than the first distance, and an interlayer insulating layer disposed between the second conductive patterns and including at least one recess region having a width corresponding to the first distance.
Public/Granted literature
- US20160322254A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2016-11-03
Information query
IPC分类: