发明授权
US09559004B2 Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy
有权
半导体装置以及通过照射能量形成的非有源区域内的沿着改质区域的载体上的薄半导体晶片的单片化方法
- 专利标题： Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy
- 专利标题（中）： 半导体装置以及通过照射能量形成的非有源区域内的沿着改质区域的载体上的薄半导体晶片的单片化方法
-
申请号： US13469754申请日： 2012-05-11
-
公开(公告)号： US09559004B2公开(公告)日： 2017-01-31
- 发明人: Byung Joon Han , Il Kwon Shim , Won Kyoung Choi
- 申请人： Byung Joon Han , Il Kwon Shim , Won Kyoung Choi
- 申请人地址： SG Singapore
- 专利权人： STATS ChipPAC Pte. Ltd.
- 当前专利权人： STATS ChipPAC Pte. Ltd.
- 当前专利权人地址： SG Singapore
- 代理机构： Patent Law Group: Atkins and Associates, P.C.
- 代理商 Robert D. Atkins
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/78 ; H01L21/683 ; H01L23/00
摘要：
A semiconductor device comprises a carrier including an adhesive disposed over the carrier. The semiconductor device further comprises a semiconductor wafer including a plurality of semiconductor die separated by a non-active region. A plurality of bumps is formed over the semiconductor die. The semiconductor wafer is mounted to the carrier with the adhesive disposed around the plurality of bumps. Irradiated energy is applied to the non-active region to form a modified region within the non-active region. The semiconductor wafer is singulated along the modified region to separate the semiconductor die. The semiconductor wafer is singulated along the modified region by applying stress to the semiconductor wafer. The adhesive is removed from around the plurality of bumps after singulating the semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor die comprising through silicon vias. The modified region optionally includes a plurality of vertically stacked modified regions.
公开/授权文献
信息查询
IPC分类:
