发明授权
- 专利标题: Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition
- 专利标题(中): 具有不同材料取向或组成的纳米线或半导体主体的共基板半导体器件
-
申请号: US13996506申请日: 2011-12-23
-
公开(公告)号: US09559160B2公开(公告)日: 2017-01-31
- 发明人: Annalisa Cappellani , Peter G. Tolchinsky , Kelin J. Kuhn , Glenn A. Glass , Van H. Le
- 申请人: Annalisa Cappellani , Peter G. Tolchinsky , Kelin J. Kuhn , Glenn A. Glass , Van H. Le
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Blakely, Sokoloff, Taylor & Zafman LLP
- 国际申请: PCT/US2011/067242 WO 20111223
- 国际公布: WO2013/095656 WO 20130627
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; H01L29/66 ; H01L29/775 ; H01L27/12 ; B82Y10/00 ; B82Y40/00 ; H01L29/06 ; H01L21/8238 ; H01L27/092
摘要:
Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition and methods to form such common-substrate devices are described. For example, a semiconductor structure includes a first semiconductor device having a first nanowire or semiconductor body disposed above a crystalline substrate. The first nanowire or semiconductor body is composed of a semiconductor material having a first global crystal orientation. The semiconductor structure also includes a second semiconductor device having a second nanowire or semiconductor body disposed above the crystalline substrate. The second nanowire or semiconductor body is composed of a semiconductor material having a second global crystal orientation different from the first global orientation. The second nanowire or semiconductor body is isolated from the crystalline substrate by an isolation pedestal disposed between the second nanowire or semiconductor body and the crystalline substrate.
公开/授权文献
信息查询
IPC分类: