Invention Grant
- Patent Title: Non-planar FET
- Patent Title (中): 非平面FET
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Application No.: US13447286Application Date: 2012-04-16
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Publication No.: US09559189B2Publication Date: 2017-01-31
- Inventor: Chin-Cheng Chien , Chun-Yuan Wu , Chih-Chien Liu , Chin-Fu Lin , Chia-Lin Hsu
- Applicant: Chin-Cheng Chien , Chun-Yuan Wu , Chih-Chien Liu , Chin-Fu Lin , Chia-Lin Hsu
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/66 ; H01L29/78 ; H01L29/165
Abstract:
The present invention provides a non-planar FET which includes a substrate, a fin structure, a gate and a gate dielectric layer. The fin structure is disposed on the substrate. The fin structure includes a first portion adjacent to the substrate wherein the first portion shrinks towards a side of the substrate. The gate is disposed on the fin structure. The gate dielectric layer is disposed between the fin structure and the gate. The present invention further provides a method of manufacturing the non-planar FET.
Public/Granted literature
- US20130270612A1 Non-Planar FET and Manufacturing Method Thereof Public/Granted day:2013-10-17
Information query
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