发明授权
- 专利标题： Non-planar FET
- 专利标题（中）： 非平面FET
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申请号： US13447286申请日： 2012-04-16
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公开(公告)号： US09559189B2公开(公告)日： 2017-01-31
- 发明人: Chin-Cheng Chien , Chun-Yuan Wu , Chih-Chien Liu , Chin-Fu Lin , Chia-Lin Hsu
- 申请人： Chin-Cheng Chien , Chun-Yuan Wu , Chih-Chien Liu , Chin-Fu Lin , Chia-Lin Hsu
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/66 ; H01L29/78 ; H01L29/165
摘要：
The present invention provides a non-planar FET which includes a substrate, a fin structure, a gate and a gate dielectric layer. The fin structure is disposed on the substrate. The fin structure includes a first portion adjacent to the substrate wherein the first portion shrinks towards a side of the substrate. The gate is disposed on the fin structure. The gate dielectric layer is disposed between the fin structure and the gate. The present invention further provides a method of manufacturing the non-planar FET.
公开/授权文献
- US20130270612A1 Non-Planar FET and Manufacturing Method Thereof 公开/授权日：2013-10-17
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