Invention Grant
- Patent Title: High capacity memory systems with inter-rank skew tolerance
- Patent Title (中): 具有跨级偏差容限的高容量存储器系统
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Application No.: US14386561Application Date: 2012-12-20
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Publication No.: US09563597B2Publication Date: 2017-02-07
- Inventor: Frederick A. Ware , Ely K. Tsern , Brian S. Leibowitz , Wayne Frederick Ellis , Akash Bansal , John Welsford Brooks , Kishore Ven Kasamsetty
- Applicant: Rambus Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Charles Shemwell
- International Application: PCT/US2012/071036 WO 20121220
- International Announcement: WO2013/141921 WO 20130926
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/42 ; G11C7/10 ; G11C5/02 ; G11C29/02 ; G06F13/16 ; G11C5/04

Abstract:
In a multirank memory system in which the clock distribution trees of each rank are permitted to drift over a wide range (e.g., low power memory systems), the fine-interleaving of commands between ranks is facilitated through the use of techniques that cause each addressed rank to properly sample commands intended for that rank, notwithstanding the drift. The ability to perform such “microthreading” provides for substantially enhanced memory capacity without sacrificing the performance of single rank systems. This disclosure provides methods, memory controllers, memory devices and system designs adapted to these ends.
Public/Granted literature
- US20150089164A1 HIGH CAPACITY MEMORY SYSTEMS Public/Granted day:2015-03-26
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