发明授权
US09564227B2 Memory device having a different source line coupled to each of a plurality of layers of memory cell arrays
有权
存储器件具有耦合到多个存储单元阵列中的每一层的不同源极线
- 专利标题： Memory device having a different source line coupled to each of a plurality of layers of memory cell arrays
- 专利标题（中）： 存储器件具有耦合到多个存储单元阵列中的每一层的不同源极线
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申请号： US14936719申请日： 2015-11-10
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公开(公告)号： US09564227B2公开(公告)日： 2017-02-07
- 发明人: Akira Goda , Zengtao Liu
- 申请人： MICRON TECHNOLOGY, INC.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： G11C16/10
- IPC分类号： G11C16/10 ; G11C5/02 ; G11C16/04 ; G11C11/56 ; G11C16/28 ; G11C16/26
摘要：
A sensing voltage may be applied to a particular memory cell that is in a particular layer of a plurality of layers of memory cells. While the sensing voltage is applied to the particular memory cell, a source voltage may be applied to an end of a string of memory cells that includes the particular memory cell. The source line voltage may be based on a programming rate of the particular layer.
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