Invention Grant
US09564495B2 Semiconductor device with a semiconductor body containing hydrogen-related donors
有权
具有含氢相关供体的半导体器件的半导体器件
- Patent Title: Semiconductor device with a semiconductor body containing hydrogen-related donors
- Patent Title (中): 具有含氢相关供体的半导体器件的半导体器件
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Application No.: US15081487Application Date: 2016-03-25
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Publication No.: US09564495B2Publication Date: 2017-02-07
- Inventor: Johannes Georg Laven , Hans-Joachim Schulze , Moriz Jelinek , Werner Schustereder
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L31/072
- IPC: H01L31/072 ; H01L31/109 ; H01L31/0328 ; H01L31/0336 ; H01L29/32 ; H01L21/225 ; H01L21/265 ; H01L21/306 ; H01L21/324 ; H01L29/04 ; H01L29/16 ; H01L29/167 ; H01L29/36 ; H01L21/322 ; H01L29/78 ; H01L29/86 ; H01L29/739 ; H01L29/74
Abstract:
A semiconductor device includes a semiconductor body with parallel first and second surfaces and containing hydrogen-related donors. A concentration profile of the hydrogen-related donors vertical to the first surface includes a maximum value of at least 1E15 cm−3 at a first distance to the first surface and does not fall below 1E14 cm−3 over at least 60% of an interval between the first surface and the first distance.
Public/Granted literature
- US20160211336A1 Semiconductor Device with a Semiconductor Body Containing Hydrogen-Related Donors Public/Granted day:2016-07-21
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