Invention Grant
- Patent Title: Resistive memory device and method of operating the same
- Patent Title (中): 电阻式存储器件及其操作方法
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Application No.: US14839606Application Date: 2015-08-28
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Publication No.: US09570170B2Publication Date: 2017-02-14
- Inventor: Chi-Weon Yoon , Hyun-Kook Park , Yeong-Taek Lee , Bo-Geun Kim , Yong-Kyu Lee
- Applicant: Chi-Weon Yoon , Hyun-Kook Park , Yeong-Taek Lee , Bo-Geun Kim , Yong-Kyu Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0166627 20141126
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C13/00 ; G11C11/56 ; G11C11/16

Abstract:
A memory device includes a memory cell array having multiple memory cells arranged respectively in regions where first signal lines cross second signal lines. The memory device further includes a decoder having multiple line selection switch units connected respectively to the of first signal lines. Each of the multiple line selection switch units applies a bias voltage to a first signal line corresponding to each of the multiple line selection switch units in response selectively to a first switching signal and a second switching signal, voltage levels of which are different from each other in activated states.
Public/Granted literature
- US20160148683A1 RESISTIVE MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2016-05-26
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