Invention Grant
US09570170B2 Resistive memory device and method of operating the same 有权
电阻式存储器件及其操作方法

Resistive memory device and method of operating the same
Abstract:
A memory device includes a memory cell array having multiple memory cells arranged respectively in regions where first signal lines cross second signal lines. The memory device further includes a decoder having multiple line selection switch units connected respectively to the of first signal lines. Each of the multiple line selection switch units applies a bias voltage to a first signal line corresponding to each of the multiple line selection switch units in response selectively to a first switching signal and a second switching signal, voltage levels of which are different from each other in activated states.
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