Invention Grant
- Patent Title: Magnetic tunnel junction (MTJ) device array
- Patent Title (中): 磁隧道结（MTJ）器件阵列
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Application No.: US14609169Application Date: 2015-01-29
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Publication No.: US09570509B2Publication Date: 2017-02-14
- Inventor: Vladimir Machkaoutsan , Matthias Georg Gottwald , Mustafa Badaroglu , Jimmy Kan , Kangho Lee , Yu Lu , Chando Park
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/08 ; H01L43/12 ; H01L43/02
Abstract:
A semiconductor device includes a first magnetic tunnel junction (MTJ) device, a second MTJ device, and a top electrode. The first MTJ device includes a barrier layer. The second MTJ device includes the barrier layer. The top electrode is coupled to the first MTJ device and the second MTJ device.
Public/Granted literature
- US20160225817A1 MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE ARRAY Public/Granted day:2016-08-04
Information query
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