Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US15049761Application Date: 2016-02-22
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Publication No.: US09570594B2Publication Date: 2017-02-14
- Inventor: Takehisa Hatano , Sachiaki Tezuka , Atsuo Isobe
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2011-226229 20111013
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12 ; H01L29/66 ; H01L27/12 ; H01L29/04 ; H01L29/24 ; H01L29/423 ; H01L29/786 ; H01L27/115 ; H01L21/033 ; H01L21/467
Abstract:
A semiconductor device which is miniaturized while favorable characteristics thereof are maintained is provided. In addition, the miniaturized semiconductor device is provided with a high yield. The semiconductor device has a structure including an oxide semiconductor film provided over a substrate having an insulating surface; a source electrode layer and a drain electrode layer which are provided in contact with side surfaces of the oxide semiconductor film and have a thickness larger than that of the oxide semiconductor film; a gate insulating film provided over the oxide semiconductor film, the source electrode layer, and the drain electrode layer; and a gate electrode layer provided in a depressed portion formed by a step between a top surface of the oxide semiconductor film and top surfaces of the source electrode layer and the drain electrode layer.
Public/Granted literature
- US20160204268A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-07-14
Information query
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