发明授权
- 专利标题： Method and processing apparatus for fabricating a magnetic resistive random access memory device
- 专利标题（中）： 用于制造磁阻随机存取存储器件的方法和处理装置
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申请号： US14794796申请日： 2015-07-08
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公开(公告)号： US09570673B2公开(公告)日： 2017-02-14
- 发明人: Yongsung Park , Kiwoong Kim , Sangyong Kim , Sechung Oh , Youngman Jang
- 申请人： Yongsung Park , Kiwoong Kim , Sangyong Kim , Sechung Oh , Youngman Jang
- 申请人地址： KR
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR
- 代理机构： Renaissance IP Law Group LLP
- 优先权： KR10-2014-0161006 20141118
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; H01L27/22
摘要：
Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.
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