公开(公告)号：US09997699B2

公开(公告)日：2018-06-12

申请号：US15158575

申请日：2016-05-18

申请人： Juhyun Kim ,  Kiwoong Kim ,  Sechung Oh ,  Woochang Lim

发明人： Juhyun Kim ,  Kiwoong Kim ,  Sechung Oh ,  Woochang Lim

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC分类号： H01L43/12 ,  H01L43/08

摘要： A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor device includes a lower electrode and a magnetic tunnel junction structure disposed on the lower electrode. The magnetic tunnel junction structure includes a seed pattern disposed on the lower electrode. The seed pattern includes an amorphous seed layer and an oxidized seed layer disposed on a surface of the amorphous seed layer. The seed pattern may prevent the lattice structure of the lower electrode from adversely affecting the lattice structure of a pinned magnetic layer of the magnetic tunnel junction structure.

公开(公告)号：US20170110657A1

公开(公告)日：2017-04-20

申请号：US15390699

申请日：2016-12-26

申请人： Yongsung PARK ,  Kiwoong KIM ,  Sangyong KIM ,  Sechung OH ,  Youngman JANG

发明人： Yongsung PARK ,  Kiwoong KIM ,  Sangyong KIM ,  Sechung OH ,  Youngman JANG

IPC分类号： H01L43/12 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.

公开(公告)号：US20070296409A1

公开(公告)日：2007-12-27

申请号：US11496304

申请日：2006-07-31

申请人： Jin-Mok Kim ,  Yong-Ho Lee ,  Hyukchan Kwon ,  Kiwoong Kim

发明人： Jin-Mok Kim ,  Yong-Ho Lee ,  Hyukchan Kwon ,  Kiwoong Kim

IPC分类号： G01N27/72

CPC分类号： G01R33/0356

摘要： The present invention relates to a reference-current optimizing apparatus of a double relaxation oscillation SQUID. According to the present invention, the optimizing apparatus is connected to a RJ-DROS in order to vary a reference current. Accordingly, the DROS can have a high response level and can operate stably, by controlling a magnetic flux-voltage conversion characteristic. Furthermore, when the RJ-DROS is fabricated, reference junctions having different critical currents are controlled to have the same reference current. Therefore, the reference junctions can have the same magnetic flux-voltage characteristic. In addition, a preamplifier having a plurality of junction bipolar transistors serves to prevent an input application current of the preamplifier from flowing into the optimizing apparatus when the output of a reference junction is detected. This enables the DROS to operate normally.

摘要翻译： 本发明涉及双弛豫振荡SQUID的参考电流优化装置。 根据本发明，优化装置连接到RJ-DROS以改变参考电流。 因此，通过控制磁通电压转换特性，DROS可以具有高响应水平并且可以稳定地运行。 此外，当制造RJ-DROS时，具有不同临界电流的参考接点被控制为具有相同的参考电流。 因此，参考接头可以具有相同的磁通电压特性。 此外，具有多个结双极晶体管的前置放大器用于在检测到参考结的输出时防止前置放大器的输入施加电流流入最优化装置。 这使DROS能够正常运行。

公开(公告)号：US10147873B2

公开(公告)日：2018-12-04

申请号：US15870854

申请日：2018-01-12

申请人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

发明人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

IPC分类号： H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

摘要： A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer, forming a first preliminary free magnetic layer (free layer) containing boron (B) on the tunneling barrier layer, forming a first buffer layer on the first preliminary free layer, performing a first annealing process to transition the first preliminary free layer to form a second preliminary free layer and the first buffer layer to form a first boride layer, performing an etching process to remove the first boride layer, forming a second buffer layer on the second preliminary free layer, performing a second annealing process to transition the second preliminary free layer to form a free layer and the second buffer layer to form a second boride layer, and performing an oxidation process to transition the second boride layer to an oxide layer.

公开(公告)号：US09570673B2

公开(公告)日：2017-02-14

申请号：US14794796

申请日：2015-07-08

申请人： Yongsung Park ,  Kiwoong Kim ,  Sangyong Kim ,  Sechung Oh ,  Youngman Jang

发明人： Yongsung Park ,  Kiwoong Kim ,  Sangyong Kim ,  Sechung Oh ,  Youngman Jang

IPC分类号： H01L21/00 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.

摘要翻译： 提供制造MRAM器件的方法与用于制造MRAM器件的处理设备一起提供。 所述方法可以包括形成铁磁层，将铁磁层冷却至约50°K至约300°K范围内的温度，形成和氧化冷却的铁磁层上的一个或多个Mg层以形成MgO结构， 在MgO结构上形成自由层，并在自由层上形成覆盖层。

公开(公告)号：US09136556B2

公开(公告)日：2015-09-15

申请号：US13582250

申请日：2011-03-31

申请人： Jihoon Cho ,  Dongmyung Kim ,  Kiwoong Kim ,  Sung-Min Hwang ,  Hyun-Chul Jung ,  Sungjin Kwon ,  Hyeong Kim ,  Ki Hong Min

发明人： Jihoon Cho ,  Dongmyung Kim ,  Kiwoong Kim ,  Sung-Min Hwang ,  Hyun-Chul Jung ,  Sungjin Kwon ,  Hyeong Kim ,  Ki Hong Min

IPC分类号： H01M10/04 ,  H01M2/16 ,  H01M2/18 ,  H01M10/0525 ,  H01M10/058 ,  H01M2/02 ,  H01M2/34

CPC分类号： H01M10/0431 ,  H01M2/021 ,  H01M2/0212 ,  H01M2/1653 ,  H01M2/1686 ,  H01M2/18 ,  H01M2/34 ,  H01M10/0436 ,  H01M10/0525 ,  H01M10/058 ,  Y02E60/122 ,  Y02P70/54 ,  Y10T29/49204

摘要： Disclosed herein is an electrode assembly of a cathode/separator/anode structure, wherein a plurality of first unit electrodes and a second electrode sheet are wound so that the first unit electrodes are opposite to the second electrode sheet via a separator sheet, and a first electrode and a second electrode have opposite polarities.

摘要翻译： 本文公开了一种阴极/隔板/阳极结构的电极组件，其中缠绕多个第一单元电极和第二电极片，使得第一单元电极经由隔离片与第二电极片相对，并且第一 电极和第二电极具有相反的极性。

公开(公告)号：US09905753B2

公开(公告)日：2018-02-27

申请号：US15157399

申请日：2016-05-17

申请人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

发明人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

IPC分类号： H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer, forming a first preliminary free magnetic layer (free layer) containing boron (B) on the tunneling barrier layer, forming a first buffer layer on the first preliminary free layer, performing a first annealing process to transition the first preliminary free layer to form a second preliminary free layer and the first buffer layer to form a first boride layer, performing an etching process to remove the first boride layer, forming a second buffer layer on the second preliminary free layer, performing a second annealing process to transition the second preliminary free layer to form a free layer and the second buffer layer to form a second boride layer, and performing an oxidation process to transition the second boride layer to an oxide layer.

公开(公告)号：US20160141496A1

公开(公告)日：2016-05-19

申请号：US14794796

申请日：2015-07-08

申请人： Yongsung PARK ,  Kiwoong KIM ,  Sangyong KIM ,  Sechung OH ,  Youngman JANG

发明人： Yongsung PARK ,  Kiwoong KIM ,  Sangyong KIM ,  Sechung OH ,  Youngman JANG

IPC分类号： H01L45/00 ,  H01L27/24

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.

摘要翻译： 提供制造MRAM器件的方法与用于制造MRAM器件的处理设备一起提供。 所述方法可以包括形成铁磁层，将铁磁层冷却至约50°K至约300°K范围内的温度，形成和氧化冷却的铁磁层上的一个或多个Mg层以形成MgO结构， 在MgO结构上形成自由层，并在自由层上形成覆盖层。

公开(公告)号：US07453263B2

公开(公告)日：2008-11-18

申请号：US11496304

申请日：2006-07-31

申请人： Jin-Mok Kim ,  Yong-Ho Lee ,  Hyukchan Kwon ,  Kiwoong Kim

发明人： Jin-Mok Kim ,  Yong-Ho Lee ,  Hyukchan Kwon ,  Kiwoong Kim

IPC分类号： G01R33/02

CPC分类号： G01R33/0356

摘要： A reference-current optimizing apparatus of a Reference Junction Double Relaxation Oscillation SQUID (RJ-DROS) with a signal SQUID and a reference junction for detecting a magnetic flux signal is provided. The reference-current optimizing apparatus includes a voltage controller for converting a digital signal into an output voltage; a buffer for receiving the output voltage and preventing a current generated in the RJ-DROS from flowing inversely into the reference-current optimizing apparatus; a low-pass filter for eliminating a noise mixed in an output voltage of the buffer; and a resistor for converting an output voltage of the low-pass filter into a current and providing both ends of the reference junction with the current. The reference-current optimizing apparatus may also include a preamplifier having a number of junction bipolar transistors.

摘要翻译： 提供了具有信号SQUID和用于检测磁通量信号的基准结的参考结双重松弛振荡SQUID（RJ-DROS）的参考电流优化装置。 参考电流优化装置包括用于将数字信号转换为输出电压的电压控制器; 用于接收输出电压并防止在RJ-DROS中产生的电流逆向流入参考电流优化装置的缓冲器; 低通滤波器，用于消除在缓冲器的输出电压中混合的噪声; 以及用于将低通滤波器的输出电压转换为电流并将参考接点的两端提供电流的电阻器。 参考电流优化装置还可以包括具有多个结双极晶体管的前置放大器。

公开(公告)号：US07388371B2

公开(公告)日：2008-06-17

申请号：US11414712

申请日：2006-04-28

申请人： Jin-Mok Kim ,  Yong-Ho Lee ,  Yong-Ki Park ,  Hyukchan Kwon ,  Kiwoong Kim

发明人： Jin-Mok Kim ,  Yong-Ho Lee ,  Yong-Ki Park ,  Hyukchan Kwon ,  Kiwoong Kim

IPC分类号： G01R33/02

CPC分类号： G01R33/0356 ,  Y10S505/846

摘要： The present invention relates to a method of controlling the characteristics of a double relaxation oscillation SQUID having a reference junction. In the method of controlling characteristics of a reference junction-type double relaxation oscillation SQUID (RJ-DROS) having a signal SQUID and a reference junction, a reference DC current flows through the reference junction in order to control the characteristics of the DROS. A modulation width of an averaged relaxation voltage, which reacts to a magnetic flux, may be controlled at the reference junction. An amount (modulation depth) of an averaged relaxation voltage, which reacts to a magnetic flux, may be controlled at the reference junction. An amount of an operation application current may be controlled at the reference junction. Accordingly, the reference current of the reference junction can be changed by causing the current to flow through the reference junction. A magnetic flux-voltage characteristic and a transfer coefficient of the DROS can be easily controlled externally and the DROS can operate stably.

摘要翻译： 本发明涉及一种控制具有参考连接点的双重松弛振荡SQUID的特性的方法。 在控制具有信号SQUID和参考结的基准结型双重弛豫振荡SQUID（RJ-DROS）的特性的方法中，参考直流电流流过参考点以便控制DROS的特性。 可以在参考点处控制与磁通反应的平均弛豫电压的调制宽度。 可以在参考点处控制与磁通量反应的平均弛豫电压的量（调制深度）。 可以在参考点处控制操作施加电流的量。 因此，可以通过使电流流过参考接点来改变参考接点的参考电流。 DROS的磁通电压特性和传递系数可以很容易地从外部控制，并且DROS可以稳定地工作。