公开(公告)号：US09761795B2

公开(公告)日：2017-09-12

申请号：US15390699

申请日：2016-12-26

申请人： Yongsung Park ,  Kiwoong Kim ,  Sangyong Kim ,  Sechung Oh ,  Youngman Jang

发明人： Yongsung Park ,  Kiwoong Kim ,  Sangyong Kim ,  Sechung Oh ,  Youngman Jang

IPC分类号： H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.

公开(公告)号：US10147873B2

公开(公告)日：2018-12-04

申请号：US15870854

申请日：2018-01-12

申请人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

发明人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

IPC分类号： H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

摘要： A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer, forming a first preliminary free magnetic layer (free layer) containing boron (B) on the tunneling barrier layer, forming a first buffer layer on the first preliminary free layer, performing a first annealing process to transition the first preliminary free layer to form a second preliminary free layer and the first buffer layer to form a first boride layer, performing an etching process to remove the first boride layer, forming a second buffer layer on the second preliminary free layer, performing a second annealing process to transition the second preliminary free layer to form a free layer and the second buffer layer to form a second boride layer, and performing an oxidation process to transition the second boride layer to an oxide layer.

公开(公告)号：US09570673B2

公开(公告)日：2017-02-14

申请号：US14794796

申请日：2015-07-08

申请人： Yongsung Park ,  Kiwoong Kim ,  Sangyong Kim ,  Sechung Oh ,  Youngman Jang

发明人： Yongsung Park ,  Kiwoong Kim ,  Sangyong Kim ,  Sechung Oh ,  Youngman Jang

IPC分类号： H01L21/00 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.

摘要翻译： 提供制造MRAM器件的方法与用于制造MRAM器件的处理设备一起提供。 所述方法可以包括形成铁磁层，将铁磁层冷却至约50°K至约300°K范围内的温度，形成和氧化冷却的铁磁层上的一个或多个Mg层以形成MgO结构， 在MgO结构上形成自由层，并在自由层上形成覆盖层。

公开(公告)号：US20170110657A1

公开(公告)日：2017-04-20

申请号：US15390699

申请日：2016-12-26

申请人： Yongsung PARK ,  Kiwoong KIM ,  Sangyong KIM ,  Sechung OH ,  Youngman JANG

发明人： Yongsung PARK ,  Kiwoong KIM ,  Sangyong KIM ,  Sechung OH ,  Youngman JANG

IPC分类号： H01L43/12 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.

公开(公告)号：US20180138397A1

公开(公告)日：2018-05-17

申请号：US15870854

申请日：2018-01-12

申请人： Joonmyoung LEE ,  Youngman JANG ,  Kiwoong KIM ,  Yongsung PARK

发明人： Joonmyoung LEE ,  Youngman JANG ,  Kiwoong KIM ,  Yongsung PARK

IPC分类号： H01L43/12 ,  H01L43/10 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer, forming a first preliminary free magnetic layer (free layer) containing boron (B) on the tunneling barrier layer, forming a first buffer layer on the first preliminary free layer, performing a first annealing process to transition the first preliminary free layer to form a second preliminary free layer and the first buffer layer to form a first boride layer, performing an etching process to remove the first boride layer, forming a second buffer layer on the second preliminary free layer, performing a second annealing process to transition the second preliminary free layer to form a free layer and the second buffer layer to form a second boride layer, and performing an oxidation process to transition the second boride layer to an oxide layer.

公开(公告)号：US20170084829A1

公开(公告)日：2017-03-23

申请号：US15157399

申请日：2016-05-17

申请人： Joonmyoung LEE ,  Youngman JANG ,  Kiwoong KIM ,  Yongsung PARK

发明人： Joonmyoung LEE ,  Youngman JANG ,  Kiwoong KIM ,  Yongsung PARK

IPC分类号： H01L43/12 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer, forming a first preliminary free magnetic layer (free layer) containing boron (B) on the tunneling barrier layer, forming a first buffer layer on the first preliminary free layer, performing a first annealing process to transition the first preliminary free layer to form a second preliminary free layer and the first buffer layer to form a first boride layer, performing an etching process to remove the first boride layer, forming a second buffer layer on the second preliminary free layer, performing a second annealing process to transition the second preliminary free layer to form a free layer and the second buffer layer to form a second boride layer, and performing an oxidation process to transition the second boride layer to an oxide layer.

公开(公告)号：US09905753B2

公开(公告)日：2018-02-27

申请号：US15157399

申请日：2016-05-17

申请人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

发明人： Joonmyoung Lee ,  Youngman Jang ,  Kiwoong Kim ,  Yongsung Park

IPC分类号： H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer, forming a first preliminary free magnetic layer (free layer) containing boron (B) on the tunneling barrier layer, forming a first buffer layer on the first preliminary free layer, performing a first annealing process to transition the first preliminary free layer to form a second preliminary free layer and the first buffer layer to form a first boride layer, performing an etching process to remove the first boride layer, forming a second buffer layer on the second preliminary free layer, performing a second annealing process to transition the second preliminary free layer to form a free layer and the second buffer layer to form a second boride layer, and performing an oxidation process to transition the second boride layer to an oxide layer.

公开(公告)号：US20160141496A1

公开(公告)日：2016-05-19

申请号：US14794796

申请日：2015-07-08

申请人： Yongsung PARK ,  Kiwoong KIM ,  Sangyong KIM ,  Sechung OH ,  Youngman JANG

发明人： Yongsung PARK ,  Kiwoong KIM ,  Sangyong KIM ,  Sechung OH ,  Youngman JANG

IPC分类号： H01L45/00 ,  H01L27/24

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.

摘要翻译： 提供制造MRAM器件的方法与用于制造MRAM器件的处理设备一起提供。 所述方法可以包括形成铁磁层，将铁磁层冷却至约50°K至约300°K范围内的温度，形成和氧化冷却的铁磁层上的一个或多个Mg层以形成MgO结构， 在MgO结构上形成自由层，并在自由层上形成覆盖层。

公开(公告)号：US20160133831A1

公开(公告)日：2016-05-12

申请号：US14919718

申请日：2015-10-21

申请人： Ki Woong KIM ,  Yongsung PARK ,  Yunjae LEE ,  Joonmyoung LEE ,  Woo Chang LIM

发明人： Ki Woong KIM ,  Yongsung PARK ,  Yunjae LEE ,  Joonmyoung LEE ,  Woo Chang LIM

IPC分类号： H01L43/12 ,  C23C14/58 ,  C23C14/16 ,  C23C14/18 ,  C23C14/34 ,  C23C14/08

CPC分类号： H01L43/12 ,  C23C14/08 ,  C23C14/081 ,  C23C14/082 ,  C23C14/083 ,  C23C14/165 ,  C23C14/185 ,  C23C14/34 ,  C23C14/3492 ,  C23C14/5853 ,  G11C11/161 ,  H01F10/3286 ,  H01F41/307

摘要： A method of forming a metal oxide layer and a magnetic memory device includes a post-oxidation process in which a process cycle is performed at least once, which includes depositing a metal layer on a magnetic layer and oxidizing the metal layer.

摘要翻译： 形成金属氧化物层的方法和磁存储器件包括其中进行至少一次处理循环的后氧化工艺，其包括在磁性层上沉积金属层并氧化金属层。