Invention Grant
- Patent Title: RRAM and method of read operation for RRAM
- Patent Title (中): RRAM和RRAM读操作方法
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Application No.: US14601458Application Date: 2015-01-21
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Publication No.: US09576651B2Publication Date: 2017-02-21
- Inventor: Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang , Chia-Fu Lee
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: G11C13/00
- IPC: G11C13/00
Abstract:
According to one embodiment, a method of RRAM operations is provided. The method includes the following operations: providing a first voltage difference across a resistor of the RRAM during a read operation; and providing a second voltage difference across the resistor of the RRAM during a reset operation, wherein the first voltage difference has the same polarity as the second voltage difference.
Public/Granted literature
- US20160211016A1 RRAM AND Method of READ OPERATION FOR RRAM Public/Granted day:2016-07-21
Information query
