Invention Grant
US09576658B2 Systems, and devices, and methods for programming a resistive memory cell
有权
系统和设备以及用于编程电阻式存储单元的方法
- Patent Title: Systems, and devices, and methods for programming a resistive memory cell
- Patent Title (中): 系统和设备以及用于编程电阻式存储单元的方法
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Application No.: US15053562Application Date: 2016-02-25
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Publication No.: US09576658B2Publication Date: 2017-02-21
- Inventor: Xiaonan Chen
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C13/00 ; G11C11/56
Abstract:
Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that comprises a quenching period having different portions. The memory cell may have more than two possible programmed states, where each programmed state of the memory cell includes a different fraction of amorphous material. A memory element may be melted and then quenched. The fraction of amorphous material, and thus the programmed state, may be controlled by selecting one of multiple quenching periods for the programming pulse.
Public/Granted literature
- US20160180932A1 SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMORY CELL Public/Granted day:2016-06-23
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