Invention Grant
US09576801B2 High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory
有权
高介电常数/金属栅（HK / MG）兼容浮栅（FG）/铁电偶极非易失性存储器
- Patent Title: High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory
- Patent Title (中): 高介电常数/金属栅（HK / MG）兼容浮栅（FG）/铁电偶极非易失性存储器
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Application No.: US14556983Application Date: 2014-12-01
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Publication No.: US09576801B2Publication Date: 2017-02-21
- Inventor: Xia Li , Jeffrey Junhao Xu , Zhongze Wang , Bin Yang , Xiaonan Chen , Yu Lu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L29/78 ; H01L29/66 ; H01L29/51 ; H01L29/49 ; H01L21/28 ; H01L29/788 ; H01L21/02 ; G11C16/04
Abstract:
Non-volatile memory devices and logic devices are fabricated using processes compatible with high dielectric constant/metal gate (HK/MG) processes for increased cell density and larger scale integration. A doped oxide layer, such as a silicon-doped hafnium oxide (HfO2) layer, is implemented as a ferroelectric dipole layer in a nonvolatile memory device.
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