Invention Grant
- Patent Title: Apparatuses having a vertical memory cell
- Patent Title (中): 具有垂直存储单元的装置
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Application No.: US14517261Application Date: 2014-10-17
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Publication No.: US09577092B2Publication Date: 2017-02-21
- Inventor: Kamal M. Karda , Rajesh N. Gupta , Srinivas Pulugurtha , Chandra V. Mouli , Wolfgang Mueller
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/78
- IPC: H01L29/78 ; G11C11/40 ; H01L27/02 ; H01L27/105 ; H01L29/66 ; H01L27/108

Abstract:
Methods, apparatuses, and systems for providing a body connection to a vertical access device. The vertical access device may include a digit line extending along a substrate to a digit line contact pillar, a body connection line extending along the substrate to a body connection line contact pillar, a body region disposed on the body connection line, an electrode disposed on the body region, and a word line extending to form a gate to the body region. A method for operation includes applying a first voltage to the body connection line, and applying a second voltage to the word line to cause a conductive channel to form through the body region. A memory cell array may include a plurality of vertical access devices.
Public/Granted literature
- US20150054063A1 APPARATUSES HAVING A VERTICAL MEMORY CELL Public/Granted day:2015-02-26
Information query
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