Invention Grant
US09583199B2 Mitigation of data retention drift by programming neighboring memory cells 有权
通过编程相邻的存储单元减少数据保留漂移

Mitigation of data retention drift by programming neighboring memory cells
Abstract:
A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group.
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