Invention Grant
US09583199B2 Mitigation of data retention drift by programming neighboring memory cells
有权
通过编程相邻的存储单元减少数据保留漂移
- Patent Title: Mitigation of data retention drift by programming neighboring memory cells
- Patent Title (中): 通过编程相邻的存储单元减少数据保留漂移
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Application No.: US15191108Application Date: 2016-06-23
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Publication No.: US09583199B2Publication Date: 2017-02-28
- Inventor: Avraham Poza Meir , Eyal Gurgi , Naftali Sommer , Yoav Kasorla
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/04 ; G11C11/56 ; G11C16/34

Abstract:
A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group.
Public/Granted literature
- US20160307631A1 MITIGATION OF DATA RETENTION DRIFT BY PROGRMMING NEIGHBORING MEMORY CELLS Public/Granted day:2016-10-20
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